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Gao, J. R., Hajenius, M., Baselmans, J. J. A., Yang, Z. Q., Baryshev, A. M., Barends, R., et al. (2005). Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications. In Proc. 9-th WMSCI (Vol. 9, pp. 148–153). International Institute of Informatics and Systemics.
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Desmaris, V., Belitsky, V., et al. (2017). Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency. In Proc. 28th Int. Symp. Space Terahertz Technol. (pp. 147–148).
Abstract: In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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Maslennikova, A., Larionov, P., Ryabchun, S., Smirnov, A., Pentin, I., Vakhtomin, Y., et al. (2011). Noise equivalent power and dynamic range of NBN hot-electron bolometers. In Proc. MLPLIT (pp. 146–148). Modern laser physics and laser-information technologies for science and manufacture.
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Ryabchun, S., Smirnov, A., Pentin, I., Vakhtomin, Y., Smirnov, K., Kaurova, N., et al. (2011). Superconducting single photon detector integrated with optical cavity. In Proc. MLPLIT (pp. 143–145). Modern laser physics and laser-information technologies for science and manufacture.
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Rath, P., Vetter, A., Kovalyuk, V., Ferrari, S., Kahl, O., Nebel, C., et al. (2016). Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps. In J. - E. Broquin, & G. N. Conti (Eds.), Integrated Optics: Devices, Mat. Technol. XX (Vol. 9750, pp. 135–142). Spie.
Abstract: We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps).
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