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Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. |
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Title |
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
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Journal Article |
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2016 |
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Semicond. |
Abbreviated Journal |
Semicond. |
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50 |
Issue |
12 |
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1600-1603 |
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Keywords |
carbon nanotubes, CNT detectors |
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Abstract |
Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed. |
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1063-7826 |
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1776 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. |
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Title |
Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state |
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1990 |
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Sov. Supercond. |
Abbreviated Journal |
Sov. Supercond. |
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3 |
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10 |
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1582-1597 |
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HEB mixers |
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240 |
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Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. |
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Title |
Superconducting microstructures with high impedance |
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Journal Article |
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2020 |
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Phys. Solid State |
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Phys. Solid State |
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62 |
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9 |
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1539-1542 |
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superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance |
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The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation. |
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1063-7834 |
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1789 |
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Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
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Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
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2005 |
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Phys. Stat. Sol. (C) |
Abbreviated Journal |
Phys. Stat. Sol. (C) |
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2 |
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5 |
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1480-1488 |
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NbN SSPD, SNSPD |
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We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range. |
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1610-1634 |
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1479 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
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Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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Journal Article |
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2010 |
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Физика и техника полупроводников |
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44 |
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11 |
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1475-1478 |
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2DEG, AlGaAs/GaAs heterostructures mixers |
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Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K. |
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Duplicated as 1216 |
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RPLAB @ gujma @ |
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702 |
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