| Records |
| Author |
Chulkova, G.; Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Voronov, B.; Okunev, O.; Smirnov, K.; Gol’tsman, G.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R.; Slysz, W. |
| Title |
Superconducting nanostructures for counting of single photons in the infrared range |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. 2-nd CAOL |
Abbreviated Journal |
Proc. 2-nd CAOL |
| Volume |
2 |
Issue |
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Pages  |
100-103 |
| Keywords |
SSPD, SNSPD |
| Abstract |
We present our studies on ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs are patterned by electron beam lithography from 4-nm thick NbN film into meander-shaped strips covering square area of 10/spl times/10 /spl mu/m/sup 2/. The advances in the fabrication technology allowed us to produce highly uniform 100-120-nm-wide strips with meander filling factor close to 0.6. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, an avalanche of excited hot electrons and the biasing supercurrent, jointly produce a picosecond voltage transient response across the superconducting nanostrip. The SSPDs are typically operated at 4.2 K, but they have shown that their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by optical absorption of our 4-nm-thick NbN film. For 1.55 /spl mu/m photons, QE was /spl sim/20% and decreases exponentially with the increase of the optical wavelength, but even at the wavelength of 6 /spl mu/m the detector remains sensitive to single photons and exhibits QE of about 10/sup -2/%. The dark (false) count rate at 2 K is as low as 2 /spl times/ 10/sup -4/ s/sup -1/, what makes our detector essentially a background-limited sensor. The very low dark-count rate results in the noise equivalent power (NEP) as low as 10/sup -18/ WHz/sup -1/2/ for the mid-infrared range (6 /spl mu/m). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for the other, lower-T/sub c/ superconductors with the narrow superconducting gap and low quasiparticle diffusivity. The use of such materials will shift the cutoff wavelength towards the values even longer than 6 /spl mu/m. |
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Second International Conference on Advanced Optoelectronics and Lasers |
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1461 |
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Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. |
| Title |
NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5727 |
Issue |
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Pages |
95-106 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter. |
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Terahertz and Gigahertz Electronics and Photonics IV |
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378 |
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Елезов, М. С.; Тархов, М. А.; Дивочий, А. В.; Вахтомин, Ю. Б.; Гольцман, Г. Н. |
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Система регистрации одиночных фотонов в видимом и ближнем инфракрасном диапазонах |
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Conference Article |
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2010 |
Publication |
Науч. сессия НИЯУ МИФИ |
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94-95 |
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SSPD |
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978-5-7262-1227-2 |
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RPLAB @ sasha @ елезов2010система |
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1032 |
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Манова, Н.Н.; Корнеева, Ю. П.; Корнеев, А. А., Гольцман, Г. Н. |
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Cверхпроводящий однофотонный детектор, интегрированный с оптическим резонатором |
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Conference Article |
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2010 |
Publication |
Науч. сессия НИЯУ МИФИ |
Abbreviated Journal |
Науч. сессия НИЯУ МИФИ |
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92-93 |
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SSPD |
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978-5-7262-1227-2 |
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УДК 533.14(06)+004.056(06) Фотоника и информационная оптика |
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1143 |
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Селиверстов, С. В.; Финкель, М. И.; Рябчун, С. А.; Воронов, Б. М.; Каурова, Н. С.; Селезнев, В. А.; Смирнов, К. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Гольцман, Г. Н. |
| Title |
Терагерцевый сверхпроводниковый детектор с аттоджоулевым энергетическим разрешением и постоянной времени 25 пс |
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Conference Article |
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2014 |
Publication |
Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» |
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1 |
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91-92 |
| Keywords |
NbN HEB |
| Abstract |
Представлены результаты измерения энергетического разрешения терагерцевого сверхпроводникового NbN-детектора на эффектеэлектронного разогрева, работающего при температуре около 10 К. Использование инновационной in situ технологии производства привело к существенному улучшению чувствительности детектора. Увеличение быстродействия детектора было достигнуто за счет реализации дополнительного диффузионного канала охла-ждения электронной подсистемы. Измеренное значение эквивалентной мощности шума на частоте 2.5 ТГц составило 2.0×10-13Вт•Гц-0.5, постоянной времени 25 пс. Соответствующее расчетное значение энергетического разрешения составило 2.5 аДж. |
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Нижний Новгород, Россия |
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Russian |
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1833 |
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