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Author Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. url  openurl
  Title Кинетические явления в компенсированном n-InSb при низких температурах Type Journal Article
  Year 1990 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 24 Issue 1 Pages (up) 3-24  
  Keywords compensated n-InSb, impurities  
  Abstract Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb.  
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  Language Russian Summary Language Original Title  
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  Notes Approved no  
  Call Number Serial 1756  
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Author Vaks, V. L.; Kurin, V. V.; Pankratov, A. L.; Koshelets, V. P. openurl 
  Title Investigation of spectral properties of phase-focked flux flow oscillator Type Abstract
  Year 2005 Publication ISEC Abbreviated Journal  
  Volume Issue Pages (up) PD-04  
  Keywords SIR, FFO  
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  Corporate Author Thesis  
  Publisher Place of Publication Netherlands Editor  
  Language Summary Language Original Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 522  
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Author Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol'tsman, G. N.; Demsar, J. doi  openurl
  Title Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy Type Journal Article
  Year 2011 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.  
  Volume 107 Issue 17 Pages (up) 4  
  Keywords NbN thin film, energy gap dynamics  
  Abstract Using time-domain terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, λ=1.1±0.1, which is in excellent agreement with theoretical estimates.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 641  
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Author Kerman, Andrew J.; Yang, Joel K. W.; Molnar, Richard J.; Dauler, Eric A.; Berggren, Karl K. openurl 
  Title Electrothermal feedback in superconducting nanowire single-photon detectors Type Journal Article
  Year 2009 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 79 Issue 10 Pages (up) 4  
  Keywords SNSPD  
  Abstract We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect and a simple model which quantitatively explains the results.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 680  
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Author Jang, Young Rae; Yoo, Keon-Ho; Park, Seung Min openurl 
  Title Rapid thermal annealing of ZnO thin films grown at room temperature Type Journal Article
  Year 2010 Publication J. Vac. Sci. Technol. A Abbreviated Journal  
  Volume 28 Issue 2 Pages (up) 4  
  Keywords Annealing  
  Abstract The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.  
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  Area Expedition Conference  
  Notes Annealing Approved no  
  Call Number RPLAB @ gujma @ Serial 692  
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