| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
| Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
5 |
Pages  |
185-186 |
| Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches |
Type |
Conference Article |
| Year |
1992 |
Publication |
Progress in High Temperature Superconductivity |
Abbreviated Journal |
Progress in High Temperature Superconductivity |
| Volume |
32 |
Issue |
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Pages |
190-195 |
| Keywords |
superconducting films, heating of electrons |
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International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991 |
| Notes |
https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8 |
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1666 |
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Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
| Title |
Electron–phonon interaction in disordered conductors |
Type |
Journal Article |
| Year |
1999 |
Publication |
Phys. Rev. B Condens. Matter |
Abbreviated Journal |
Phys. Rev. B Condens. Matter |
| Volume |
263-264 |
Issue |
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Pages |
190-192 |
| Keywords |
disordered conductors, electron-phonon interaction |
| Abstract |
The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
| Title |
Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film |
Type |
Conference Article |
| Year |
1993 |
Publication |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Abbreviated Journal |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
| Volume |
112 |
Issue |
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Pages |
193-195 |
| Keywords |
YBCO HTS detectors |
| Abstract |
We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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1663 |
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Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Limiting characteristic of fast superconducting bolometers |
Type |
Journal Article |
| Year |
1989 |
Publication |
Sov. Phys.-Tech. Phys. |
Abbreviated Journal |
Sov. Phys.-Tech. Phys. |
| Volume |
34 |
Issue |
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Pages |
195-199 |
| Keywords |
HEB |
| Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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О предельных характеристиках быстродействующих серхпроводниковых болометров |
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no |
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237 |
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