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Zwiller, Vale<cc><81>ry; Blom, Hans; Jonsson, Per; Panev, Nikolay; Jeppesen, Sören; Tsegaye, Tedros; Goobar, Edgard; Pistol, Mats-Erik; Samuelson, Lars; Björk, Gunnar |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Single quantum dots emit single photons at a time: Antibunching experiments |
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Journal Article |
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2001 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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78 |
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17 |
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2476 |
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antibunching, quantum dot |
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0003-6951 |
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502 |
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Meledin, D. V.; Marrone, D. P.; Tong, C.-Y. E.; Gibson, H.; Blundell, R.; Paine, S. N.; Papa, D.C.; Smith, M.; Hunter, T. R.; Battat, J.; Voronov, B.; Gol'tsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations |
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Journal Article |
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Year |
2004 |
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IEEE Trans. Microwave Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microwave Theory Techn. |
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52 |
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10 |
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2338-2343 |
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NbN HEB mixer, applications |
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In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile. |
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0018-9480 |
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1484 |
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Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла |
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Journal Article |
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Year |
1990 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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24 |
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12 |
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2145-2150 |
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Hall constant, concentration of impurities, p-Si |
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На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. |
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1754 |
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Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Механизм преобразования частоты в n-InSb-смесителе |
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Journal Article |
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1991 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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25 |
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11 |
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1986-1998 |
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n-InSb mixer |
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Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. |
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1753 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
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Journal Article |
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1983 |
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Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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17 |
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10 |
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1873-1876 |
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compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
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1763 |
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Zhang, Wen; Li, Ning; Jiang, Ling; Miao, Wei; Lin, Zhen-Hui; Yao, Qi-Jun; Shi, Sheng-Cai; Chen, Jian; Wu, Pei-Heng; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Gol'tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Noise behaviour of a THz superconducting hot-electron bolometer mixer |
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Journal Article |
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2007 |
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Chinese Phys. Lett. |
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Chinese Phys. Lett. |
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24 |
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6 |
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1778-1781 |
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NbN HEB mixers |
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A quasi-optical superconducting NbN hot-electron bolometer (HEB) mixer is measured in the frequency range of 0.5–2.5 THz for understanding of the frequency dependence of noise temperature of THz coherent detectors. It has been found that noise temperature increasing with frequency is mainly due to the coupling loss between the quasi-optical planar antenna and the superconducting HEB bridge when taking account of non-uniform distribution of high-frequency current. With the coupling loss corrected, the superconducting HEB mixer demonstrates a noise temperature nearly independent of frequency. |
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0256-307X |
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1430 |
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Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths |
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1997 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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70 |
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12 |
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1619-1621 |
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NbN HEB mixers |
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Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell. |
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0003-6951 |
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1599 |
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Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee |
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Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications |
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1994 |
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IEEE Trans. Electron Devices |
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41 |
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9 |
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1489-1497 |
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253 |
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Karpowicz, Nicholas; Lu, Xiaofei; Zhang, X.-C. |
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Terahertz gas photonics |
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2009 |
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J. Modern Opt. |
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56 |
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10 |
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1137-1150 |
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The underlying physics of the generation and detection of terahertz (THz) waves in gases are described. The THz wave generation process takes place in two steps: asymmetric gas ionization by two-frequency laser fields, followed by interaction of the ionized electron wave packets with the surrounding medium, producing an intense ‘echo' with tunable spectral content. In order to clarify the physical picture at the moment of ionization, the laser–atom interaction is treated through solution of the time-dependent Schrödinger equation, yielding an ab initio understanding of the release of the electron wave packets. The second step, where the electrons interact with the surrounding plasma is treated analytically. The resulting pressure dependence of the THz radiation is explored in detail. The THz wave detection process is shown to be the result of four-wave mixing, leading to analytical expressions of the signal obtained which allow for improved optimization of systems that exploit these effects. |
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RPLAB @ gujma @ |
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670 |
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Semenov, A. D.; Il'in, K.; Siegel, M.; Smirnov, A.; Pavlov, S.; Richter, H.; Hübers, H.-W. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Evidence of non-bolometric mixing in the bandwidth of a hot-electron bolometer |
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2006 |
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Superconductor Science and Technology |
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Supercond. Sci. Technol. |
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19 |
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10 |
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1051-1056 |
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HEB |
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0953-2048 |
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