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Baryshev, A., Baselmans, J. J. A., Reker, S. F., Hajenius, M., Gao, J. R., Klapwijk, T. M., et al. (2005). Direct detection effect in hot electron bolometer mixers. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 463–464).
Abstract: NbN phonon cooled hot electron bolometer (HEB) mixers are currently the most sensitive heterodyne detectors at frequencies above 1.2 THz. They combine a good sensitivity (8-15 times the quantum limit), an IF bandwidth of the order of 4-6 GHz and a wide RF bandwidth from 0.7-5.2 THz. However, for use in a space based observatory, such as Herschel, it is of vital importance that the Local Oscillator (LO) power requirement of the mixer is compatible with the low output power of present day THz LO sources. This can be achieved by reducing the mixer volume and critical current. However, the large RF bandwidth and low LO power requirement of such a mixer result in a direct detection effect, characterized by a change in the bias current of the HEB when changing the RF signal from a black body load at 300 K to one at 77 K. As a result the measured sensitivity using a 300 K and 77 K calibration load differs significantly from the small signal sensitivity relevant for astronomical observations. In this article we describe a set of dedicated experiments to characterize the direct detection effect for a small volume quasi-optical NbN phonon cooled HEB mixer. We measure the direct detection effect in a small volume (0.15 μm · 1 μm · 3.5 nm) quasi- optical NbN phonon cooled HEB mixer at 1.6 THz. We found that the small signal sensitivity of the receiver is underestimated by approximately 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300 K and 77 K. Using a 200 GHz wide band-pass filter at the 4.2 K the direct detection effect virtually disappears. Heterodyne response measurements using water vapor absorption line in a gas cell confirms the existence and a magnitude of a direct detection effect. We also propose a theoretical explanation using uniform electron heating model. This direct detection effect has important implications for the calibration procedure of these receivers in real telescope systems. We are developing Nb HEBs for a large-format, diffusion-cooled hot electron bolometer (HEB) array submillimeter camera. The goal is to produce a 64 pixel array together with the University of Arizona to be used on the HHT on Mt Graham. It is designed to detect in the 850 GHz atmospheric window. We have fabricated Nb HEBs using a new angle- deposition process, which had previously produced high quality Nb-Au bilayer HEB devices at Yale. [1] We have characterized these devices using heterodyne mixing at ~30 GHz to compare to 345 GHz tests at the University of Arizona. We can also directly compare our Nb HEB mixers to SIS mixers in this same 345 GHz system. This allows us to rigorously calibrate the system’s losses and extract the mixer noise temperature in a well characterized mixer block, before undertaking the 850 GHz system. Here we give a report on the initial devices we have fabricated and characterized. * Department of Applied Physics, Yale University ** Department of Astronomy, University of Arizona [1] Applied Physics Letters 84, Number 8; p.1404-7, Feb 23 (2004)
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Baselmans, J. J. A., Hajenius, M., Gao, J. R., Baryshev, A., Kooi, J., Klapwijk, T. M., et al. (2005). NbN hot electron bolometer mixers: sensitivity, LO power, direct detection and stability. IEEE Trans. Appl. Supercond., 15(2), 484–489.
Abstract: We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. Both the receiver noise temperature and the gain bandwidth can be improved by a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature of 950 K at 2.5 THz and 4.3 K, using a 0.4/spl times/4 /spl mu/m HEB mixer with a spiral antenna. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. To comply with current demands on THz mixers for use in space based receivers we reduce the device size to 0.15/spl times/1 /spl mu/m and use a twin slot antenna. We report measurements of the noise temperature, LO power requirement, stability and the direct detection effect, using a mixer with a 1.6 THz twin slot antenna and a 1.462 THz solid state LO source with calibrated output power.
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Hajenius, M., Barends, R., Gao, J. R., Klapwijk, T. M., Baselmans, J. J. A., Baryshev, A., et al. (2005). Local resistivity and the current-voltage characteristics of hot electron bolometer mixers. IEEE Trans. Appl. Supercond., 15(2), 495–498.
Abstract: Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling.
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Klapwijk, T. M., & Semenov, A. V. (2017). Engineering physics of superconducting hot-electron bolometer mixers. IEEE Trans. THz Sci. Technol., 7(6), 627–648.
Abstract: Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.
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Finkel, M., Thierschmann, H., Galatro, L., Katan, A. J., Thoen, D. J., de Visser, P. J., et al. (2017). Performance of THz components based on microstrip PECVD SiNx technology. IEEE Trans. THz Sci. Technol., 7(6), 765–771.
Abstract: We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
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de Lange, G., Kuipers, J. J., Klapwijk, T. M., Panhuyzen, R. A., van de Stadt, H., & de Graauw, M. W. M. (1995). Superconducting resonator circuits at frequencies above the gap frequency. J. Appl. Phys., 77(4), 1795–1804.
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Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers. Appl. Phys. Lett., 84(11), 1958–1960.
Abstract: We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
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Ganzevles, W. F. M., Gao, J. R., de Korte, P. A. J., & Klapwijk, T. M. (2001). Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers. Appl. Phys. Lett., 79(15), 2483–2485.
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Floet, D. W., Baselmans, J. J. A., Klapwijk, T. M., & Gao, J. R. (1998). Resistive transition of niobium superconducting hot-electron bolometer mixers. Appl. Phys. Lett., 73(19), 2826.
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Romijn, J., Klapwijk, T. M., Renne, M. J., & Mooij, J. E. (1982). Critical pair-breaking current in superconducting aluminum strips far below Tc. Phys. Rev. B, 26(7), 3648–3655.
Abstract: Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a Ïl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for Ïl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity.
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Korneeva, Y., Vodolazov, D., Florya, I., Manova, N., Smirnov, E., Korneev, A., et al. (2018). Single photon detection in micron scale NbN and α-MoSi superconducting strips. In EPJ Web Conf. (Vol. 190, 04010 (1 to 2)).
Abstract: We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection.
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Yang, Y., Fedorov, G., Shafranjuk, S. E., Klapwijk, T. M., Cooper, B. K., Lewis, R. M., et al. (2015). Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes. Nano Lett., 15(12), 7859–7866.
Abstract: Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.
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Heslinga, D. R., Shafranjuk, S. E., van Kempen, H., & Klapwijk, T. M. (1994). Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy. Phys. Rev. B, 49(15), 10484–10494.
Abstract: Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.
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Kooi, J. W., Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., Dieleman, P., et al. (2007). IF impedance and mixer gain of NbN hot electron bolometers. J. Appl. Phys., 101(4), 044511.
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Gao, J. R., Hajenius, M., Tichelaar, F. D., Klapwijk, T. M., Voronov, B., Grishin, E., et al. (2007). Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate. Appl. Phys. Lett., 91(6), 062504 (1 to 3).
Abstract: The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
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