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Author Hovenier J.N.; Adam A.J.L.; Kašalynas I.; Gao J.R.; Klaassen T.O.; Baryshev A.; Williams B.S.; Kumar S.; Hu Q.; Reno J.L. openurl 
  Title Phase-locking on the beat signal of a two-mode 2.7 terahertz metal-metal quantum cascade laser Type Conference Article
  Year 2006 Publication Proc. Symp. IEEE/LEOS Benelux Chapter Abbreviated Journal  
  Volume Issue Pages (up) 125-128  
  Keywords  
  Abstract We have studied the linewidth and phase-locking of a 2.7 THz quantum cascade laser by using a superconducting bolometer mixer. The 8 GHz beat signal is compared with a microwave reference with a feedback to the laser bias current. Phase locking has been demonstrated, resulting in an extremely narrow beat linewidth of less than 10 Hz. Under frequency-stabilization conditions we find that the line profile is virtually Lorentzian with a long-term minimum linewidth of the THz modes of about 6.3 kHz. Temperature dependent measurements suggestthat this linewidthdoes not approach the Schawlow-Townes limit.  
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  Notes Approved no  
  Call Number RPLAB @ atomics90 @ Serial 968  
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Author Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. url  openurl
  Title Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz Type Conference Article
  Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 17th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages (up) 177-179  
  Keywords directly coupled NbN HEB mixers  
  Abstract We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz.  
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  Publisher Place of Publication Paris, France Editor  
  Language Summary Language Original Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 386  
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Author Goltsman, G. N. url  doi
openurl 
  Title Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications Type Abstract
  Year 2006 Publication 31nd IRMW / 14th ICTE Abbreviated Journal 31nd IRMW / 14th ICTE  
  Volume Issue Pages (up) 177  
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  Area Expedition Conference Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics  
  Notes Approved no  
  Call Number Serial 1443  
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Author Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. url  openurl
  Title Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? Type Conference Article
  Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 17th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages (up) 187-189  
  Keywords NbN HEB mixers  
  Abstract We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1439  
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Author Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B. url  doi
openurl 
  Title Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer Type Conference Article
  Year 2006 Publication Proc. MRS Abbreviated Journal Proc. MRS  
  Volume 935 Issue Pages (up) 210 (1 to 6)  
  Keywords NbN HEB mixers  
  Abstract Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0272-9172 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1440  
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