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Gol'tsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Słysz, W.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, Roman |
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Title |
Superconducting nanostructured detectors capable of single-photon counting in the THz range |
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Conference Article |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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555-557 |
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NbN SSPD, SNSPD |
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We present the results of the NbN superconducting single-photon detector sensitivity measurement in the visible to mid-IR range. For visible and near IR light (0.56 — 1.3μm wavelengths) the detector exhibits 30% quantum efficiency saturation value limited by the NbN film absorption and extremely low level of dark counts (2x10 -4 s -1). The detector manifested single-photon counting up to 6 μm wavelength with the quantum efficiency reaching 10 -2 % at 5.6 μm and 3 K temperature. |
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1476 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
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1977 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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45 |
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3 |
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555-565 |
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Ge, GaAs, magnetic field, donors, energy spectrum |
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The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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1728 |
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Baubert, J.; Salez, M.; Delorme, Y.; Pons, P.; Goltsman, G.; Merkel, H.; Leconte, B. |
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Membrane-based HEB mixer for THz applications |
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Conference Article |
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2003 |
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Proc. SPIE |
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Proc. SPIE |
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5116 |
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551-562 |
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membrane NbN HEB mixers, heterodyne receiver, stress-less membrane, coupling efficiency, submillimeter-waves frequency, low-cost space applications |
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We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly. |
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SPIE |
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Chiao, J.-C.; Varadan, V.K.; Cané, C. |
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Smart Sensors, Actuators, and MEMS |
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1520 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
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1999 |
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Semicond. |
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Semicond. |
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33 |
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5 |
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551-554 |
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2DEG, AlGaAs/GaAs heterostructures |
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The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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1063-7826 |
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1571 |
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Kurochkin, V. L.; Zverev, A. V.; Kurochkin, Y. V.; Ryabtsev, I. I.; Neizvestnyi, I. G.; Ozhegov, R. V.; Gol’tsman, G. N.; Larionov, P. A. |
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Long-distance fiber-optic quantum key distribution using superconducting detectors |
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Conference Article |
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2015 |
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Proc. Optoelectron. Instrum. |
Abbreviated Journal |
Proc. Optoelectron. Instrum. |
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51 |
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6 |
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548-552 |
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QKD, SSPD, SNSPD |
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This paper presents the results of experimental studies on quantum key distribution in optical fiber using superconducting detectors. Key generation was obtained on an experimental setup based on a self-compensation optical circuit with an optical fiber length of 101.1 km. It was first shown that photon polarization encoding can be used for quantum key distribution in optical fiber over a distance in excess of 300 km. |
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8756-6990 |
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1342 |
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