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Author Semenov, A. D.; Gol’tsman, G. N.; Gogidze, I. G.; Sergeev, A. V.; Gershenzon, E. M.; Lang, P. T.; Renk, K. F. url  doi
openurl 
  Title Subnanosecond photoresponse of a YBaCuO thin film to infrared and visible radiation by quasiparticle induced suppression of superconductivity Type Journal Article
  Year 1992 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 60 Issue 7 Pages (down) 903-905  
  Keywords YBCO HTS detectors  
  Abstract We observed subnanosecond photoresponse of a structured superconducting YBa2Cu3O7−δ thin film to infrared and visible radiation. We measured the voltage response of a current biased film (thickness 700 Å) in a resistive state to radiation pulses. From our results we conclude a response time of about 90 ps and a responsivity of about 4×1010 Ω/J. We attribute the response to Cooper pair breaking and suppression of the superconducting energy gap induced by nonequilibrium quasiparticles.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1672  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. url  openurl
  Title Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
  Year 1986 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 64 Issue 4 Pages (down) 889-897  
  Keywords Ge, trapping of free carriers  
  Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1707  
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Author Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N. doi  openurl
  Title Optimisation of spontaneous four-wave mixing in a ring microcavity Type Conference Article
  Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 47 Issue 10 Pages (down) 887-891  
  Keywords ring microcavity  
  Abstract Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1142  
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Author Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. url  isbn
openurl 
  Title Ultrafast superconducting bolometer receivers for terahertz applications Type Abstract
  Year 2009 Publication Proc. PIERS Abbreviated Journal Proc. PIERS  
  Volume Issue Pages (down) 867  
  Keywords HEB  
  Abstract The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.  
  Address Moscow, Russia  
  Corporate Author Thesis  
  Publisher The Electromagnetics Academy Place of Publication 777 Concord Avenue, Suite 207 Cambridge, MA 02138 Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1559-9450 ISBN 978-1-934142-09-7 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ sasha @ ozhegovultrafast Serial 1022  
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Author Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Tarkhov, M. A.; Gol’tsman, G. N. url  openurl
  Title Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures Type Abstract
  Year 2009 Publication Proc. Progress In Electromagnetics Research Symp. Abbreviated Journal Proc. Progress In Electromagnetics Research Symp.  
  Volume Issue Pages (down) 863-864  
  Keywords SSPD, SNSPD  
  Abstract The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Moscow, Russia Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ sasha @ smirnovsession Serial 1050  
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