Records |
Author |
Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Карасик, Б. С.; Потоскуев, С. Э. |
Title |
Разогрев электронов в резистивном состоянии сверхпроводника электромагнитным излучением значительной интенсивности |
Type |
Journal Article |
Year |
1988 |
Publication |
Физика низких температур |
Abbreviated Journal |
Физика низких температур |
Volume |
14 |
Issue |
7 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
753-763 |
Keywords |
HEB |
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Duplicated as 1697 |
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883 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
Title |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
Type |
Journal Article |
Year |
1988 |
Publication |
Fizika Nizkikh Temperatur |
Abbreviated Journal |
Fizika Nizkikh Temperatur |
Volume |
14 |
Issue |
7 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
753-763 |
Keywords |
Nb HEB |
Abstract |
An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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1697 |
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Author |
Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G. |
Title |
A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator |
Type |
Conference Article |
Year |
2003 |
Publication |
IEEE MTT-S Int. Microwave Symp. Digest |
Abbreviated Journal |
IEEE MTT-S Int. Microwave Symp. Digest |
Volume |
2 |
Issue |
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Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
751-754 |
Keywords |
waveguide NbN HEB mixers |
Abstract |
We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W. |
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Philadelphia, PA, USA |
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1516 |
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Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
Title |
Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses |
Type |
Journal Article |
Year |
1994 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
Volume |
7 |
Issue |
4 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
751-755 |
Keywords |
YBCO HTS detector, nonequilibrium response |
Abstract |
The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions. |
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0896-1107 |
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1636 |
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Author |
Ожегов, Р. В.; Окунев, О. В.; Гольцман, Г. Н.; Филиппенко, Л. В.; Кошелец, В. П. |
Title |
Флуктуационная чувствительность сверхпроводящего интегрального приемника терагерцового диапазона частот |
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Journal Article |
Year |
2009 |
Publication |
Радиотехника и электроника |
Abbreviated Journal |
Радиотех. электроник. |
Volume |
54 |
Issue |
6 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
750-755 |
Keywords |
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Abstract |
Исследована зависимость флуктуационной чувствительности сверхпроводящего интегрального приемника (СИП) от шумовой температуры приемника и величины входного сигнала. Измерена рекордная флуктуационная чувствительность приемника (13 ± 2 мК), полученная при шумовой температуре приемника 200 К, ширине полосы промежуточных частот 4 ГГц и постоянной времени 1 с. При уменьшении входного сигнала наблюдалось улучшение флуктуационной чувствительности; предложено обÑŠяснение полученного эффекта: причиной является уменьшение влияния нестабильностей источников питания приемника и усилительного тракта при снижении входного сигнала. |
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RPLAB @ gujma @ |
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710 |
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