Records |
Author |
Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N. |
Title |
Terahertz heterodyne receivers based on superconductive hot-electron bolometer mixers |
Type |
Journal Article |
Year |
2005 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
Volume |
48 |
Issue |
10-11 |
Pages |
859-864 |
Keywords |
HEB, applications |
Abstract |
We consider recent results in development of hot-electron bolometer mixers. Special attention is paid to optimization of the contacts between the antenna and the active area of a superconducting film. An important result in the study of the parasitic effect of direct detection is obtained during the measurement of the noise temperatures by the hot/cold load method. The latest results of studies of the waveguide hot-electron bolometer mixers and their successful practical applications are considered. Progress in development of high-frequency (over 1.3 THz) heterodyne receivers for several important international projects is discussed and new submillimeter radio astronomy projects ESPRIT and SAFIR are described. |
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0033-8443 |
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381 |
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Author |
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
Title |
Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
Type |
Conference Article |
Year |
1996 |
Publication |
Czech. J. Phys. |
Abbreviated Journal |
Czech. J. Phys. |
Volume |
46 |
Issue |
S2 |
Pages |
857-858 |
Keywords |
NbC films |
Abstract |
Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
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0011-4626 |
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1617 |
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Author |
Rönnung, F.; Cherednichenko, S.; Winkler, D.; Gol'tsman, G. N. |
Title |
A nanoscale YBCO mixer optically coupled with a bow tie antenna |
Type |
Journal Article |
Year |
1999 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
Volume |
12 |
Issue |
11 |
Pages |
853-855 |
Keywords |
YBCO HTS HEB mixers |
Abstract |
The bolometric response of YBa2Cu3O7-δ(YBCO) hot-electron bolometers (HEBs) to near-infrared radiation was studied. Devices were fabricated from a 50 nm thick film and had in-plane areas of 10 × 10 µm2, 2 × 0.2 µm2, 1 × 0.2µm2 and 0.5 × 0.2 µm2. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one. |
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0953-2048 |
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1563 |
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Author |
Colombelli, R |
Title |
FIR quantum cascade lasers at λ>20 μm and THz emitters at λ=80 μm |
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Journal Article |
Year |
2002 |
Publication |
Phys. E: Low-dimensional Systems and Nanostructures |
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13 |
Issue |
2-4 |
Pages |
848-853 |
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1386-9477 |
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483 |
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Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
Type |
Journal Article |
Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
Volume |
23 |
Issue |
8 |
Pages |
843-846 |
Keywords |
Ge, crystallography |
Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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Serial |
1692 |
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