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Author | Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene | ||||
Title | First light with an 800 GHz phonon-cooled HEB mixer receiver | Type | Conference Article | ||
Year | 1998 | Publication | Proc. 9th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 9th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages ![]() |
35-43 | ||
Keywords | HEB, mixer, LO power, local oscillator power, saturation effect, dynamic range | ||||
Abstract | Phonon-cooled superconductive hot-electron bolometric (HEB) mixers are incorporated in a waveguide receiver designed to operate near 800 Gliz. The mixer elements are thin-film nio- bium nitride microbridges with dimensions of 4 nm thickness, 0.2 to 0.3 p.m in length and 2 jun in width. At 780 GHz the best receiver noise temperature is 840 K (DSB). The mixer IF bandwidth is 2.0 GHz, the absorbed LO power is —0.1 1.1W. A fixed-tuned version of the re- ceiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, Arizona, to conduct astronomical observations. These observations represent the first time that a receiver incorporating any superconducting HEB mixer has been used to detect a spectral line of celes- tial origin. | ||||
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Publisher | Place of Publication | Pasadena, California, USA | Editor | ||
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Notes | Approved | no | |||
Call Number | Serial | 572 | |||
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Author | Benz, A. O.; Bruderer, S.; van Dishoeck, E. F.; Stäuber, P.; Wampfler, S. F.; Melchior, M.; Dedes, C.; Wyrowski, F.; Doty, S. D.; van der Tak, F.; Bächtold, W.; Csillaghy, A.; Megej, A.; Monstein, C.; Soldati, M.; Bachiller, R.; Baudry, A.; Benedettini, M.; Bergin, E.; Bjerkeli, P.; Blake, G. A.; Bontemps, S.; Braine, J.; Caselli, P.; Cernicharo, J.; Codella, C.; Daniel, F.; di Giorgio, A. M.; Dieleman, P.; Dominik, C.; Encrenaz, P.; Fich, M.; Fuente, A.; Giannini, T.; Goicoechea, J. R.; de Graauw, Th.; Helmich, F.; Herczeg, G. J.; Herpin, F.; Hogerheijde, M. R.; Jacq, T.; Jellema, W.; Johnstone, D.; Jørgensen, J. K.; Kristensen, L. E.; Larsson, B.; Lis, D.; Liseau, R.; Marseille, M.; McCoey, C.; Melnick, G.; Neufeld, D.; Nisini, B.; Olberg, M.; Ossenkopf, V.; Parise, B.; Pearson, J. C.; Plume, R.; Risacher, C.; Santiago-García, J.; Saraceno, P.; Schieder, R.; Shipman, R.; Stutzki, J.; Tafalla, M.; Tielens, A. G. G. M.; van Kempen, T. A.; Visser, R.; Yıldız, U. A. | ||||
Title | Hydrides in young stellar objects: Radiation tracers in a protostar-disk-outflow system | Type | Journal Article | ||
Year | 2010 | Publication | Astron. Astrophys. | Abbreviated Journal | |
Volume | 521 | Issue | Pages ![]() |
L35 (1 to 5) | |
Keywords | HEB mixer applications, HIFI, Herschel | ||||
Abstract | Context. Hydrides of the most abundant heavier elements are fundamental molecules in cosmic chemistry. Some of them trace gas irradiated by UV or X-rays. Aims. We explore the abundances of major hydrides in W3 IRS5, a prototypical region of high-mass star formation. Methods. W3 IRS5 was observed by HIFI on the Herschel Space Observatory with deep integration (2500 s) in 8 spectral regions. Results. The target lines including CH, NH, H3O+, and the new molecules SH+, H2O+, and OH+ are detected. The H2O+ and OH+ J = 1–0 lines are found mostly in absorption, but also appear to exhibit weak emission (P-Cyg-like). Emission requires high density, thus originates most likely near the protostar. This is corroborated by the absence of line shifts relative to the young stellar object (YSO). In addition, H2O+ and OH+ also contain strong absorption components at a velocity shifted relative to W3 IRS5, which are attributed to foreground clouds. Conclusions. The molecular column densities derived from observations correlate well with the predictions of a model that assumes the main emission region is in outflow walls, heated and irradiated by protostellar UV radiation. |
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Notes | Approved | no | |||
Call Number | Serial | 1082 | |||
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Author | Semenov, Alexei D.; Hiibers, Heinz-Wilhelm; Richter, Heiko; Smirnov, Konstantin; Gol'tsman, Gregory N.; Kaurova, Natalia; Voronov, Boris M. | ||||
Title | Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers | Type | Conference Article | ||
Year | 2003 | Publication | Proc. 14th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 14th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages ![]() |
33-40 | ||
Keywords | NbN HEB mixers | ||||
Abstract | A number of on-going astronomical and atmospheric research programs are aimed to the Terahertz (THz) spectral region. At frequencies above about 1.4 THz heterodyne receivers planned for these missions will use superconducting hot-electron bolometers as a mixers. We present recent results of the terahertz antenna development of superconducting NbN hot-electron bolometer mixer for GREAT (German Receiver for Astronomy at Terahertz Frequencies, to be used aboard of SOFIA) and TELIS (Terahertz Limb Sounder). The mixer is incorporated into hybrid antenna consisting of a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and hyper hemispherical silicon lens. The hybrid antenna showed almost frequency independent and symmetric radiation pattern with the beam-width slightly broader than expected for diffraction limited antenna. The noise temperature as well as its spectral dependence changes with the bolometer sizes that provides additional tool for mixer optimization. FTS spectra measured in the direct detection regime agreed with the noise temperature spectra. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1498 | |||
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Author | Масленникова, А. В.; Рябчун, С. А.; Финкель, М. И.; Каурова, Н. С.; Исупова, А. А.; Воронов, Б. М.; Гольцман, Г. Н. | ||||
Title | Широкополосные смесители на горячих электронах на основе NbN наноструктур | Type | Journal Article | ||
Year | 2011 | Publication | Труды Московского физико-технического института | Abbreviated Journal | Труды МФТИ |
Volume | 3 | Issue | 2 | Pages ![]() |
31-34 |
Keywords | HEB mixer | ||||
Abstract | Мы приводим данные исследования полосы преобразования смесителей на горячих электронах (hot-electron bolometer, НЕВ), изготовленных на основе тонких пленок NbN. Зависимость полосы преобразования от длины смесительного элемента находится в прекрасном согласии с результатами теоретической модели HEB-смесителя, в котором энергетическая релаксация электронов одновременно происходит по двум каналам: фононному и диффузионному. | ||||
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Notes | Approved | no | |||
Call Number | RPLAB @ gujma @ | Serial | 646 | ||
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Author | Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. | ||||
Title | Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method | Type | Conference Article | ||
Year | 2016 | Publication | Proc. 27th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | |
Volume | Issue | Pages ![]() |
30-32 | ||
Keywords | NbN HEB, GaN buffer layer | ||||
Abstract | In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1202 | |||
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