Records |
Author |
Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
Title |
Picosecond superconducting single-photon optical detector |
Type |
Journal Article |
Year |
2001 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
79 |
Issue |
6 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
705-707 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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0003-6951 |
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1543 |
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Корнеев, А. А.; Минаева, О.; Рубцова, И.; Милостная, И.; Чулкова, Г.; Воронов, Б.; Смирнов, К.; Селезнёв, В.; Гольцман, Г.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Верёвкин, А.; Sobolewski, R. |
Title |
Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN |
Type |
Journal Article |
Year |
2005 |
Publication |
Квантовая электроника |
Abbreviated Journal |
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Volume |
35 |
Issue |
8 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
698-700 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Представлены результаты исследований сверхпроводящих однофотонных детекторов, изготовленных из ультратонкой пленки NbN. Развитие технологического процесса изготовления детекторов, а также снижение рабочей температуры до 2 К позволили существенно увеличить квантовую эффективность: для видимого света (λ = 0.56 мкм) она составила 30%–40%, т.е. достигла предела, определяемого коэффициентом поглощения пленки. С ростом длины волны квантовая эффективность экспоненциально падает, составляя ~20% на λ=1.55 мкм и ~0.02% на λ = 5 мкм. При скорости темнового счета ~10-4s-1 экспериментально измеренная эквивалентная мощность шума составила 1.5 × 10-20 Вт/Гц-1/2; в дальнейшем она может быть уменьшена до рекордно низкого значения 5 × 10-21 Вт/Гц-1/2. Временное разрешение детектора равно 30 пс. |
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Duplicated as 383 (Superconducting single-photon ultrathin NbN film detector) |
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382 |
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Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. |
Title |
Superconducting single-photon ultrathin NbN film detector |
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Journal Article |
Year |
2005 |
Publication |
Quantum Electronics |
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35 |
Issue |
8 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
698-700 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps. |
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Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN |
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383 |
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Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N. |
Title |
Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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688-689 |
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NbN HEB mixers |
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Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area |
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1445 |
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Вахтомин, Ю. Б.; Антипов, С. В.; Масленников, С. Н.; Смирнов, К. В.; Поляков, С. Л.; Чжан, В.; Свечников, С. И.; Каурова, Н. С.; Гришина, Е. В.; Воронов, Б. М.; Гольцман, Г. Н. |
Title |
Квазиоптические смесители терагерцового диапазона на основе эффекта разогрева электронов в тонких пленках NbN |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
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Volume |
2 |
Issue |
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Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
688-689 |
Keywords |
NbN HEB mixers |
Abstract |
Представлены результаты измерения рактеристик смесителей на эффекте разогрева электронов в тонких сверхпроводниковых пленках NbN. Смесители были изготовлены на основе пленок NbN толщиной 2-3.5 нм осажденных на кремниевую подложку с буферным подсло- ем MgO. Смесительный элемент согласовывался с планар- ной логопериодической спиральной антенной. Лучшее зна- чение шумовой температуры приемника на основе NbN смесителя составило 1300 К и 3100 К на частотах гетеро- дина 2.5 TГц и 3.8 ТГц, соответственно. Максимальное зна- чение полосы преобразования, измеренной на частоте 900 |Ц, достигло значения 5.2 ГГц для смесителя изготовлен- ного из NbN пленки толщиной 2 нм. Оптимальная мощность Представлены результаты измерения ха- гетеродинного источника составила 1-3 мкВт для смесите- лей с различным объемом смесительного элемента. |
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Duplicated as 1445 |
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1446 |
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