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Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479 details   doi
Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride 1997 Tech. Phys. Lett. 23 486-488 details   doi
Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range 2003 IEEE Microw. Wireless Compon. Lett. 13 493-495 details   doi
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation 1990 Solid State Communications 76 493-497 details   doi
Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. Amplification of a Raman scattering signal by carbon nanotubes 2018 Dokl. Phys. 63 496-498 details   doi
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