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Author Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman
Title Characterization of the electron energy relaxation process in NbN hot-electron devices Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages (down) 390-397
Keywords HEB mixers, SSPD, SNSPD, NbN films, Nb films
Abstract We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
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Notes Approved no
Call Number Serial 1576
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Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte 2, P. A. J.; Voronov, B.; Gol’tsman, G.
Title Increased bandwidth of NbN phonon cooled hot electron bolometer mixers Type Conference Article
Year 2004 Publication Proc. 15th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 15th Int. Symp. Space Terahertz Technol.
Volume Issue Pages (down) 381-386
Keywords NbN HEB mixers, IF bandwidth
Abstract We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film.
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Notes Approved no
Call Number Serial 1494
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Author Loudkov, D.; Khosropanah, P.; Cherednichenko, S.; Adam, A.; MerkeI, H.; Kollberg, E.; Gol'tsman, G.
Title Broadband fourier transform spectrometer (FTS) measurements of spiral and double-slot planar antennas at THz frequencies Type Conference Article
Year 2002 Publication Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 13th Int. Symp. Space Terahertz Technol.
Volume Issue Pages (down) 373-369
Keywords NbN HEB mixers
Abstract The direct responses of NbN phonon-cooled hot electron bolometer (HEB) mixers, integrated with different planar antennas, are measured, using Fourier Transform Spectrometer (F1S). One spiral antenna and several double slot antennas, designed for 0.6, 1.4, 1.6, 1.8 and 2.5 THz central frequencies, are investigated. The Optimization of the measurement set-up is discussed in terms of the beam splitter and the F11S-to-HEB coupling. The result shows that the spiral antenna is circular polarized and has a bandwidth of about 2 THz. The frequency bands of double slot antennas show some shift from the design values and their relative bandwidth increases by increasing the design frequency. The antenna responses do not depend on the HEB bias point and temperature, as long as the device is in the resistive state.
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Notes Approved no
Call Number Serial 1530
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Author Lang, P. T.; Knott, W. J.; Leipold, I.; Renk, K. F.; Semenov, A. D.; Gol'tsman, G. N.
Title Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity Type Journal Article
Year 1992 Publication Int. J. of Infrared and Millimeter Waves Abbreviated Journal Int. J. of Infrared and Millimeter Waves
Volume 13 Issue 3 Pages (down) 373-380
Keywords CO2 IR lasers, FIR
Abstract We report on generation and detection of intense pulsed radiation with frequency tunability in the infrared and far-infrared spectral regions. Infrared radiation is generated with a transversally electrically excited high pressure CO2 laser. A laser pulse of a total duration of about 300 ns consisted, due to self mode locking, of a series of single pulses, some with pulse durations of less than 450 ps and peak powers larger than 20 MW. Using these pulses for optical with durations less than 400 ps were obtained. For detection a new ultrafast superconducting detector was used.
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ISSN 0195-9271 ISBN Medium
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Notes Approved no
Call Number Serial 1671
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages (down) 369-376
Keywords Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Notes Approved no
Call Number Serial 1711
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