| Records |
| Author |
Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
| Title |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
Type |
Journal Article |
| Year |
1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
23 |
Issue |
8 |
Pages  |
1356-1361 |
| Keywords |
Ge, crystallography |
| Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Russian |
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Duplicated as 1692 |
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1691 |
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| Author |
Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
| Title |
Electron-phonon interaction in disordered NbN films |
Type |
Journal Article |
| Year |
1994 |
Publication |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
| Volume |
194-196 |
Issue |
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Pages |
1355-1356 |
| Keywords |
NbN films |
| Abstract |
Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films. |
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0921-4526 |
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1649 |
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Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
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PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
Type |
Journal Article |
| Year |
2000 |
Publication |
Microelectronics Reliability |
Abbreviated Journal |
Microelectronics Reliability |
| Volume |
40 |
Issue |
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Pages |
1353-1358 |
| Keywords |
SSPD, CMOS testing |
| Abstract |
Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
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Germanium hot-electron narrow-band detector |
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Journal Article |
| Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
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16 |
Issue |
8 |
Pages |
1346 |
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Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Milostnaya, I.; Korneev, A.; Rubtsova, I.; Seleznev, V.; Minaeva, O.; Chulkova, G.; Okunev, O.; Voronov, B.; Smirnov, K.; Gol'tsman, G.; Slysz, W.; Wegrzecki, M.; Guziewicz, M.; Bar, J.; Gorska, M.; Pearlman, A.; Kitaygorsky, J.; Cross, A.; Sobolewski, R. |
| Title |
Superconducting single-photon detectors designed for operation at 1.55-µm telecommunication wavelength |
Type |
Conference Article |
| Year |
2006 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
43 |
Issue |
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Pages |
1334-1337 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ~30-40%, which is limited by the NbN film absorption. For the infrared range (1.55µm), QE is ~6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ~20% for 1.55-µm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 µm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 µm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-µm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ~1% system QE for 1.55 µm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications. |
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1742-6588 |
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1450 |
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