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Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
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Title |
Population of excited-states of small admixtures in germanium |
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Conference Article |
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Year |
1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1154-1159 |
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Keywords |
Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
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Title |
Ultrafast superconducting single-photon optical detectors and their applications |
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Journal Article |
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2003 |
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IEEE Trans. Appl. Supercond. |
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Volume |
13 |
Issue |
2 |
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1151-1157 |
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Keywords |
NbN SSPD, SNSPD |
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We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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1051-8223 |
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509 |
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Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. |
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Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it |
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Conference Article |
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1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1142-1148 |
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energy spectrum, Ge, magnetic field |
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1722 |
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Gordon, N. T.; Lees, D. J.; Bowen, G.; Phillips, T. S.; Haigh, M.; Jones, C. L.; Maxey, C. D.; Hipwood, L.; Catchpole, R. A. |
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Title |
HgCdTe detectors operating above 200 K |
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Journal Article |
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2006 |
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J. Electron. Mater. |
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35 |
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6 |
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1140-1144 |
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HgCdTe detector |
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0361-5235 |
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467 |
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Karpowicz, Nicholas; Lu, Xiaofei; Zhang, X.-C. |
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Terahertz gas photonics |
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2009 |
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J. Modern Opt. |
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56 |
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10 |
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1137-1150 |
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The underlying physics of the generation and detection of terahertz (THz) waves in gases are described. The THz wave generation process takes place in two steps: asymmetric gas ionization by two-frequency laser fields, followed by interaction of the ionized electron wave packets with the surrounding medium, producing an intense ‘echo' with tunable spectral content. In order to clarify the physical picture at the moment of ionization, the laser–atom interaction is treated through solution of the time-dependent Schrödinger equation, yielding an ab initio understanding of the release of the electron wave packets. The second step, where the electrons interact with the surrounding plasma is treated analytically. The resulting pressure dependence of the THz radiation is explored in detail. The THz wave detection process is shown to be the result of four-wave mixing, leading to analytical expressions of the signal obtained which allow for improved optimization of systems that exploit these effects. |
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RPLAB @ gujma @ |
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670 |
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