|
Records |
Links |
|
Author |
Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Thermal boundary resistance at YBaCuO film-substrate interface |
Type |
Conference Article |
|
Year |
1993 |
Publication |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Abbreviated Journal |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
|
|
Volume |
112 |
Issue |
|
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
405-406 |
|
|
Keywords |
YBCO films |
|
|
Abstract |
The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
Meissner, M.; Pohl, R. O. |
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1665 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
Type |
Journal Article |
|
Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
64 |
Issue |
5 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
404-409 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
Approved |
no |
|
|
Call Number |
|
Serial |
1608 |
|
Permanent link to this record |
|
|
|
|
Author |
Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Золотов, Ф. И.; Вахтомин, Ю. Б.; Смирнов, К. В. |
![find book details (via ISBN) isbn](img/isbn.gif)
|
|
Title |
Высокоэффективные NBN однофотонные детекторы с разрешением числа фотонов |
Type |
Conference Article |
|
Year |
2018 |
Publication |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
Abbreviated Journal |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
|
|
Volume |
|
Issue |
|
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
400-401 |
|
|
Keywords |
SSPD, SNSPD |
|
|
Abstract |
Разработаны и исследованы сверхпроводниковые однофотонные детекторы, способные к разрешению до 3-х фотонов в коротком импульсе излучения и имеющие квантовую эффективность детектирования одиночных фотонов ~60% на длине волны lambda=1.55 мкм. Проведенная модернизация технологии изготовления детекторов, позволила получить приемные устройства с мультифотонной квантовой эффективностью, приближающейся к расчетным значениям. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
978-5-7262-2445-9 |
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
УДК 535(06)+004(06) |
Approved |
no |
|
|
Call Number |
|
Serial |
1250 |
|
Permanent link to this record |
|
|
|
|
Author |
Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Input bandwidth of hot electron bolometer with spiral antenna |
Type |
Journal Article |
|
Year |
2012 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
|
|
Volume |
2 |
Issue |
4 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
400-405 |
|
|
Keywords |
NbN HEB bolometers bandwidth, log-spiral antenna |
|
|
Abstract |
We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
2156-342X |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1161 |
|
Permanent link to this record |
|
|
|
|
Author |
Hajenius, M.; Yang, Z. Q.; Gao, J. R.; Baselmans, J. J. A.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Optimized sensitivity of NbN hot electron bolometer mixers by annealing |
Type |
Journal Article |
|
Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
|
|
Volume |
17 |
Issue |
2 |
Pages ![sorted by First Page field, descending order (down)](img/sort_desc.gif) |
399-402 |
|
|
Keywords |
NbN HEB mixers |
|
|
Abstract |
We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1426 |
|
Permanent link to this record |