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Fetterman, H. R.; Tannenwald, P. E.; Clifton, B. J.; Parker, C. D.; Fitzgerald, W. D.; Erickson, N. R. |
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Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers |
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1978 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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33 |
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2 |
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151-154 |
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Schottky |
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Frequency countings close to a phase locked zone in an electronic receiver show a 1/f power spectral density. The noise scaling versus the frequency deviation and the open loop gain are found from Adler's model of the phase locked loop. This fully agrees with experiments performed at 5 MHz on a receiver with a Schottky diode mixer and a low pass filter. The 1/f amplitude and frequency noise due to the whole set of (sub)harmonics is explained from a nonlinear mapping, with a coupling coefficient related to the structure of prime numbers. |
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Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
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Graphene-based lateral Schottky diodes for detecting terahertz radiation |
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2018 |
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Proc. Optical Sensing and Detection V |
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Proc. Optical Sensing and Detection V |
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10680 |
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30-39 |
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graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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Spie |
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Berghmans, F.; Mignani, A.G. |
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Treuttel, J.; Thomas, B.; Maestrini, A.; Wang, H.; Alderman, B.; Siles, J.V.; Davis, S.; Narhi, T. |
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A 380 GHz sub-harmonic mixer using MMIC foundry based Schottky diodes transferred onto quartz substrate |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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