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Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films 1993 Appl. Phys. Lett. 63 681-683 details   doi
Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V. On-Chip Single Plasmon Detection 2010 Nano Letters 10 661-664 details   doi
Kawano, Yukio; Ishibashi, Koji An on-chip near-field terahertz probe and detector 2008 Nature Photonics 2 618-621 details   doi
Arams, F.; Allen, C.; Peyton, B.; Sard, E. Millimeter mixing and detection in bulk InSb 1966 Proc. IEEE 54 612-622 details   openurl
Siemsen, K. J.; Bernard, J. E.; Madej, A. A.; Marmet, L. Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz 2001 Applied Physics B: Lasers and Optics 72 567-573 details   openurl
Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits 2017 Optica 4 557-562 details   doi
Bespalov, A.V.; Gol'tsman, G.N.; Semenov, A.D.; Renk, K.F. Determination of the far-infrared emission characteristic of a cyclotron p-germanium laser by use of a superconducting Nb detector 1991 Solid State Communications 80 503-506 details   doi
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation 1990 Solid State Communications 76 493-497 details   doi
Gershenzon, E. M.; Gol’tsman, G. N.; Sergeev, A.; Semenov, A. D. Picosecond response of YBaCuO films to electromagnetic radiation 1990 Proc. European Conf. High-Tc Thin Films and Single Crystals 457-462 details   doi
Gol'tsman, G. N.; Semenov, A. D.; Gousev, Y. P.; Zorin, M. A.; Gogidze, I. G.; Gershenzon, E. M.; Lang, P. T.; Knott, W. J.; Renk, K. F. Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light 1991 Supercond. Sci. Technol. 4 453-456 details   doi
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