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Ryabchun, S. A., Tretyakov, I. V., Finkel, M. I., Maslennikov, S. N., Kaurova, N. S., Seleznev, V. A., et al. (2009). NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling. In Proc. 20th Int. Symp. Space Terahertz Technol. (pp. 151–154). Charlottesville, USA.
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Gousev, Y. P., Olsson, H. K., Gol'tsman, G. N., Voronov, B. M., & Gershenzon, E. M. (1998). NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 121–129).
Abstract: We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz.
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Tretyakov, I., Kaurova, N., Voronov, B. M., & Goltsman, G. N. (2018). About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers. In Proc. 29th Int. Symp. Space Terahertz Technol. (113).
Abstract: Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.
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Gerecht, E., Musante, C. F., Jian, H., Yngvesson, K. S., Dickinson, J., Waldman, J., et al. (1998). Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 105–114).
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Fedorov, G., Kardakova, A., Gayduchenko, I., Voronov, B. M., Finkel, M., Klapwijk, T. M., et al. (2014). Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation. In Proc. 25th Int. Symp. Space Terahertz Technol. (71).
Abstract: This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.
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