| Records |
| Author |
Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
| Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
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Journal Article |
| Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
75 |
Issue |
7 |
Pages  |
3695-3697 |
| Keywords |
NbN HEB |
| Abstract |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. |
| Title |
Noise characteristics of a NbN hot-electron mixer at 2.5 THz |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3572-3575 |
| Keywords |
NbN HEB mixers |
| Abstract |
The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation. |
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1051-8223 |
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1594 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
| Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
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Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
| Keywords |
NbN HEB mixers |
| Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1595 |
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Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K. |
| Title |
Spiral antenna NbN hot-electron bolometer mixer at submm frequencies |
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Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3395-3398 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB. |
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1051-8223 |
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1597 |
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Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
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Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors |
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Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
9 |
Issue |
2 |
Pages |
3338-3341 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films. |
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1051-8223 |
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1566 |
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