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Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. |
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Title |
Superconducting parallel nanowire detector with photon number resolving functionality |
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Journal Article |
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Year |
2009 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
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56 |
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2-3 |
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334-344 |
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PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN |
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Abstract |
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
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0950-0340 |
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RPLAB @ gujma @ |
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701 |
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Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. |
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Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors |
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Journal Article |
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2015 |
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Carbon |
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Carbon |
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87 |
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330-337 |
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carbon nanotubes, CNT detectors, field effect transistors, FET |
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Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. |
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0008-6223 |
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1778 |
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Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. |
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A fast infrared detector based on patterned YBCO thin film |
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1994 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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7 |
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5 |
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321-323 |
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YBCO HTS detector |
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Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. |
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0953-2048 |
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1646 |
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Елезов, М. С.; Щербатенко, М. Л.; Сыч, Д. В.; Гольцман, Г. Н. |
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Практические особенности работы оптоволоконного квантового приемника Кеннеди |
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2019 |
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Proc. IWQO |
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Proc. IWQO |
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303-305 |
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Kennedy quantum receiver, fiber, quantum optics, standard quantum limit, superconducting nanowire single-photon detector, coherent detection |
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Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела. |
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Russian |
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Duplicated as 1288 |
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1283 |
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Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength |
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Conference Article |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
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284-293 |
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NbN HEB mixers, detectors |
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We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future. |
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