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Author Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S.
Title Gain and noise bandwidth of NbN hot-electron bolometric mixers Type Journal Article
Year 1997 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 70 Issue 24 Pages (down) 3296-3298
Keywords NbN HEB mixers, conversion loss, conversion gain, U-factor technique
Abstract We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
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Call Number Serial 279
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Author Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A.
Title Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 9 Issue 2 Pages (down) 3216-3219
Keywords RSFQ, NbN, SIS
Abstract A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).
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Call Number Serial 1081
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Author Semenov, A. D.; Heusinger, M. A.; Renk, K. F.; Menschikov, E.; Sergeev, A. V.; Elant'ev, A. I.; Goghidze, I. G.; Gol'tsman, G. N.
Title Influence of phonon trapping on the performance of NbN kinetic inductance detectors Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages (down) 3083-3086
Keywords NbN KID
Abstract Voltage and microwave photoresponse of NbN thin films to modulated and pulsed optical radiation reveals, far below the superconducting transition, a response time consistent with the lifetime of nonequilibrium quasiparticles. We show that even in 5 nm thick films at 4.2 K the phonon trapping is significant resulting in a quasiparticle lifetime of a few nanoseconds that is an order of magnitude larger than the recombination time. Values and temperature dependence of the quasiparticle lifetime obey the Bardeen-Cooper-Schrieffer theory and are in quantitative agreement with the electron-phonon relaxation rate determined from the resistive response near the superconducting transition. We discuss a positive effect of the phonon trapping on the performance of kinetic inductance detectors.
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 1598
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Author Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.
Title NbN hot electron superconducting mixers for 100 GHz operation Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages (down) 3065-3068
Keywords NbN HEB mixers
Abstract NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
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ISSN 1051-8223 ISBN Medium
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Notes About LO power required Approved no
Call Number Serial 255
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Author Semenov, A.; Richter, H.; Hübers, H.-W.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
Title Development of terahertz superconducting hot-electron bolometer mixers Type Conference Article
Year 2003 Publication Proc. 6th European Conf. Appl. Supercond. Abbreviated Journal Proc. 6th European Conf. Appl. Supercond.
Volume 181 Issue Pages (down) 2960-2965
Keywords NbN HEB mixers
Abstract We present recent results of the development of phonon cooled hot-electron bolometric (HEB) mixers for airborne and balloon borne terahertz heterodyne receivers. Three iomportant issues have been addresses: the quality of NbN films the HEB mixers were made from, the spectral properties of the HEB mixers and the local oscillator power required for optical operation. Studies with an atomic force microscope indicate, that the performance of the HEB mixer might have been effected by the microstructure of the NbN film. Antenna gain and noise temperature were investigated at terahertz frequencies for a HEB embedded in either log-spiral or twin-slot feed antenna. Comparison suggests that at frequencies above 3 THz the spiral feed provides better overall performance. At 1.6 THz, a power of 2.5 µW was required from the local oscillator for optimal operation of the HEB mixer.
Address Sorrento, Italy
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ISSN ISBN 0750309814, 978-0750309813 Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1505
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