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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
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Title |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
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Journal Article |
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1988 |
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Fizika Nizkikh Temperatur |
Abbreviated Journal |
Fizika Nizkikh Temperatur |
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14 |
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7 |
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753-763 |
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Keywords |
Nb HEB |
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Abstract |
An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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1697 |
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Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
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Title |
Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses |
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Journal Article |
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Year |
1994 |
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J. Supercond. |
Abbreviated Journal |
J. Supercond. |
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Volume |
7 |
Issue |
4 |
Pages |
751-755 |
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Keywords |
YBCO HTS detector, nonequilibrium response |
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Abstract |
The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions. |
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0896-1107 |
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1636 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Title |
Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz |
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Journal Article |
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1999 |
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Supercond. Sci. Technol. |
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12 |
Issue |
11 |
Pages |
748-750 |
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Keywords |
NbN HEB mixers |
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Abstract |
We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz). |
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298 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
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Title |
Capture of photoexcited carriers by shallow impurity centers in germanium |
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Journal Article |
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Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
50 |
Issue |
4 |
Pages |
728-734 |
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Keywords |
Ge, photoexcited carriers, shallow impurity centers |
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Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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1720 |
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Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. |
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Title |
Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation |
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Journal Article |
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2000 |
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IEEE Trans. Microw. Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microw. Theory Techn. |
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Volume |
48 |
Issue |
4 |
Pages |
683-689 |
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Keywords |
NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range |
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In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season. |
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0018-9480 |
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RPLAB @ lobanovyury @ |
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573 |
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Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
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Title |
Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films |
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Journal Article |
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1993 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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63 |
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5 |
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681-683 |
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Keywords |
YBCO HTS detectors, nonequilibrium |
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The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons. |
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0003-6951 |
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1655 |
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Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Title |
Broad-band terahertz NbN hot-electron bolometric mixer |
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Conference Article |
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1999 |
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Inst. Phys. Conf. |
Abbreviated Journal |
Inst. Phys. Conf. |
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167 |
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663-666 |
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NbN HEB mixers |
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4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999 |
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1578 |
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Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
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1999 |
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Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
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6 |
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10-12 |
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649-655 |
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NbN HEB mixers |
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The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field. |
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0964-1807 |
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1564 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
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Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
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1990 |
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Solid State Communications |
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Solid State Communications |
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75 |
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8 |
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639-641 |
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impure superconductors |
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Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals. |
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0038-1098 |
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1687 |
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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Investigation of population and ionization of donor excited states in Ge |
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1976 |
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Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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