| Records |
| Author |
Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Slepneva, S.; Seleznev, V.; Chulkova, G.; Okunev, O.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Slysz, W.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R. |
| Title |
Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5957 |
Issue |
|
Pages  |
59570A (1 to 9) |
| Keywords |
SSPD, SNSPD, single-photon detectors, superconductors, superconducting |
| Abstract |
We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
SPIE |
Place of Publication |
|
Editor |
Rogalski, A.; Dereniak, E.L.; Sizov, F.F. |
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
Infrared Photoelectronics |
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1458 |
| Permanent link to this record |
| |
|
| |
| Author |
Galin, M. A.; Klushin, A. M.; Kurin, V. V.; Seliverstov, S. V.; Finkel, M. I.; Goltsman, G. N.; Müller, F.; Scheller, T.; Semenov, A. D. |
| Title |
Towards local oscillators based on arrays of niobium Josephson junctions |
Type |
Journal Article |
| Year |
2015 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
28 |
Issue |
5 |
Pages |
055002 (1 to 7) |
| Keywords |
Josephson junction local oscillators, JJ LO |
| Abstract |
Various applications in the field of terahertz technology are in urgent need of compact, wide-tunable solid-state continuous wave radiation sources with a moderate power. However, satisfactory solutions for the THz frequency range are scarce yet. Here we report on coherent radiation from a large planar array of Josephson junctions (JJs) in the frequency range between 0.1 and 0.3 THz. The external resonator providing the synchronization of JJ array is identified as a straight fragment of a single-strip-line containing the junctions themselves. We demonstrate a prototype of the quasioptical heterodyne receiver with the JJ array as a local oscillator and a hot-electron bolometer mixer. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0953-2048 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1347 |
| Permanent link to this record |
| |
|
| |
| Author |
Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
| Title |
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates |
Type |
Journal Article |
| Year |
2021 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
15 |
Issue |
5 |
Pages |
054014 |
| Keywords |
InOx, Au/Ni, NbN films |
| Abstract |
We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
2331-7019 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1769 |
| Permanent link to this record |
| |
|
| |
| Author |
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
| Title |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
|
Pages |
051054 |
| Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
| Abstract |
We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1742-6588 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1300 |
| Permanent link to this record |
| |
|
| |
| Author |
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
| Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
|
Pages |
051050 (1 to 5) |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
| Abstract |
In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1742-6588 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1301 |
| Permanent link to this record |
