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Svechnikov, S., Verevkin, A., Voronov, B., Menschikov, E., Gershenzon, E., & Gol'tsman, G. (1998). Quasioptical phonon-cooled NbN hot electron bolometer mixers at 0.5-1.1 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 45–51).
Abstract: The noise performance of a receiver incorporating spiral antenna coupled NbN phonon-cooled superconducting hot electron bolometric mixer is measured from 450 GHz to 1200 GHz. The mixer element is thin (thickness nm) NbN 1.5 pm wide and 0.2 i.um long film fabricated by lift-off e-beam lithography on high-resistive silicon substrate. The noise of the receiver temperature is 1000 K at 800-900 GHz, 1200 K at 950 GHz, and 1600 K at 1.08 THz. The required (absorbed) local-oscillator power is —20 nW.
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Корнеева, Ю. П., Флоря, И. Н., Корнеев, А. А., & Гольцман, Г. Н. (2010). Cверхпроводящий однофотонный детектор для дальнего ИК диапазона длин волн. In Науч. сессия НИЯУ МИФИ (pp. 46–47).
Abstract: Мы представляем быстродействующий сверхпроводниковый однофотонный детектор (SSPD) для дальнего инфракрасного диапазона на основе ультратонкой монокристаллической пленки NbN толщиной 3 нм, состоящий из параллельных полосок. QE на длине волны 1,5.μм и 1,3 μм для предложенного SSPD практически одинаковы. SSPD показывает отклик длительностью 200 пс, что открывает путь к детекторам, обладающим скоростью счета свыше 1 ГГц.
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Елезов, М. С., Корнеев, А. А., Дивочий, А. В., & Гольцман, Г. Н. (2009). Сверхпроводящие однофотонные детекторы с разрешением числа фотонов. In Науч. сессия МИФИ (pp. 47–58).
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Kovaluyk, V., Lazarenko, P., Kozyukhin, S., An, P., Prokhodtsov, A., Goltsman, G., et al. (2019). Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures. In Proc. Amorphous and Nanostructured Chalcogenides (pp. 47–48). Technical University of Moldova.
Abstract: The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Gerecht, E., Musante, C. F., Yngvesson, K. S., Waldman, J., Gol'tsman, G. N., Yagoubov, P. A., et al. (1997). Optical coupling and conversion gain for NbN HEB mixer at THz frequencies. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 47–50).
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