| Records |
| Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
| Title |
Investigation of population and ionization of donor excited states in Ge |
Type |
Conference Article |
| Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
| Volume |
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Issue |
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Pages  |
631-634 |
| Keywords |
Ge, donor excited states |
| Abstract |
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| Address |
Amsterdam |
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Thesis |
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| Publisher |
North-Holland Publishing Co. |
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no |
| Call Number |
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Serial |
1732 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
| Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
Type |
Journal Article |
| Year |
1990 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
75 |
Issue |
8 |
Pages |
639-641 |
| Keywords |
impure superconductors |
| Abstract |
Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals. |
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Edition |
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| ISSN |
0038-1098 |
ISBN |
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Approved |
no |
| Call Number |
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Serial |
1687 |
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| Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
Type |
Journal Article |
| Year |
1999 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
| Volume |
6 |
Issue |
10-12 |
Pages |
649-655 |
| Keywords |
NbN HEB mixers |
| Abstract |
The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field. |
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Edition |
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| ISSN |
0964-1807 |
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no |
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Serial |
1564 |
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| Author |
Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
| Title |
Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films |
Type |
Journal Article |
| Year |
1993 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
63 |
Issue |
5 |
Pages |
681-683 |
| Keywords |
YBCO HTS detectors, nonequilibrium |
| Abstract |
The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons. |
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Edition |
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| ISSN |
0003-6951 |
ISBN |
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Medium |
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| Notes |
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Approved |
no |
| Call Number |
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Serial |
1655 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
| Title |
Capture of photoexcited carriers by shallow impurity centers in germanium |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
50 |
Issue |
4 |
Pages |
728-734 |
| Keywords |
Ge, photoexcited carriers, shallow impurity centers |
| Abstract |
Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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no |
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Serial |
1720 |
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