|
|
Il'in, K. S., Cherednichenko, S. I., Gol'tsman, G. N., Currie, M., & Sobolewski, R. (1998). Comparative study of the bandwidth of phonon-cooled NbN hot-electron bolometers in submillimeter and optical wavelength ranges. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 323–330).
Abstract: We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100- fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth.
|
|
|
|
Yagoubov, P., Gol'tsman, G., Voronov, B., Svechnikov, S., Cherednichenko, S., Gershenzon, E., et al. (1996). Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 303–317).
Abstract: In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
|
|
|
|
Merkel, H. F., Yagoubov, P. A., Kroug, M., Khosropanah, P., Kollberg, E. L., Gol’tsman, G. N., et al. (1998). Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies. In Proc. 28th European Microwave Conf. (Vol. 1, pp. 294–299).
Abstract: In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
|
|
|
|
Yagubov, P., Gol'tsman, G., Voronov, B., Seidman, L., Siomash, V., Cherednichenko, S., et al. (1996). The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 290–302). Charlottesville, Virginia, USA.
Abstract: We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
|
|
|
|
Hübers, H. - W., Semenov, A. D., Richter, H., Schubert, J., Hadjiloucas, S., Bowen, J. W., et al. (2001). Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 286–296). San Diego, CA, USA.
|
|
