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Hubers, H. - W., Semenov, A., Richter, H., Schwarz, M., Gunther, B., Smirnov, K., et al. (2004). Heterodyne receiver for 3-5 THz with hot-electron bolometer mixer. In J. Zmuidzinas, W. S. Holland, & S. Withington (Eds.), Proc. SPIE (Vol. 5498, pp. 579–586). SPIE.
Abstract: Heterodyne receivers for applications in astronomy and planetary research need quantum limited sensitivity. In instruments which are currently build for SOFIA and Herschel superconducting hot electron bolometers (HEB) will be used to achieve this goal at frequencies above 1.4 THz. The local oscillator and the mixer are the most critical components for a heterodyne receiver operating at 3-5 THz. The design and performance of an optically pumped THz gas laser optimized for this frequency band will be presented. In order to optimize the performance for this frequency hot electron bolometer mixers with different in-plane dimensions and logarithmic-spiral feed antennas have been investigated. Their noise temperatures and beam patterns were measured. Above 3 THz the best performance was achieved with a superconducting bridge of 2.0 x 0.2 μm2 incorporated in a logarithmic spiral antenna. The DSB noise temperatures were 2700 K, 4700 K and 6400 K at 3.1 THz, 4.3 THz and 5.2 THz, respectively. The results demonstrate that the NbN HEB is very well suited as a mixer for THz heterodyne receivers up to at least 5 THz.
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Ryabchun, S. A., Tretyakov, I. V., Pentin, I. V., Kaurova, N. S., Seleznev, V. A., Voronov, B. M., et al. (2009). Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron., 52(8), 576–582.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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Gol’tsman, G., Okunev, O., Chulkova, G., Lipatov, A., Dzardanov, A., Smirnov, K., et al. (2001). Fabrication and properties of an ultrafast NbN hot-electron single-photon detector. IEEE Trans. Appl. Supercond., 11(1), 574–577.
Abstract: A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
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Tret'yakov, I. V., Kaurova, N. S., Voronov, B. M., Anfert'ev, V. A., Revin, L. S., Vaks, V. L., et al. (2016). The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range. Tech. Phys. Lett., 42(6), 563–566.
Abstract: Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.
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Gol'tsman, G., Korneev, A., Minaeva, O., Rubtsova, I., Milostnaya, I., Chulkova, G., et al. (2005). Superconducting nanostructured detectors capable of single-photon counting in the THz range. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 555–557).
Abstract: We present the results of the NbN superconducting single-photon detector sensitivity measurement in the visible to mid-IR range. For visible and near IR light (0.56 — 1.3μm wavelengths) the detector exhibits 30% quantum efficiency saturation value limited by the NbN film absorption and extremely low level of dark counts (2x10 -4 s -1). The detector manifested single-photon counting up to 6 μm wavelength with the quantum efficiency reaching 10 -2 % at 5.6 μm and 3 K temperature.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Voronov, B. M., Gol’tsman, G. N., Gershenson, E. M., et al. (1999). Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts. Semicond., 33(5), 551–554.
Abstract: The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
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Kitaygorsky, J., Zhang, J., Verevkin, A., Sergeev, A., Korneev, A., Matvienko, V., et al. (2005). Origin of dark counts in nanostructured NbN single-photon detectors. IEEE Trans. Appl. Supercond., 15(2), 545–548.
Abstract: We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations.
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Goltsman, G., Korneev, A., Izbenko, V., Smirnov, K., Kouminov, P., Voronov, B., et al. (2004). Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1-3), 527–529.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Goltsman, G., Korneev, A., Minaeva, O., Rubtsova, I., Chulkova, G., Milostnaya, I., et al. (2005). Advanced nanostructured optical NbN single-photon detector operated at 2.0 K. In M. Razeghi, & G. J. Brown (Eds.), Proc. SPIE (Vol. 5732, pp. 520–529). Spie.
Abstract: We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as 30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was 20% and decreased exponentially with the wavelength reaching 0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.
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Vorobyov, V. V., Kazakov, A. Y., Soshenko, V. V., Korneev, A. A., Shalaginov, M. Y., Bolshedvorskii, S. V., et al. (2017). Superconducting detector for visible and near-infrared quantum emitters [Invited]. Opt. Mater. Express, 7(2), 513–526.
Abstract: Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
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