| Records |
| Author |
Marsili, F.; Bitauld, D.; Divochiy, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.; Lagoudakis, K.G.; Benkahoul, M.; Lévy, F.; Fiore, A. |
| Title |
Superconducting nanowire photon number resolving detector at telecom wavelength |
Type |
Conference Article |
| Year |
2008 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
| Volume |
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Issue |
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Pages |
Qmj1 (1 to 2) |
| Keywords |
PNR SSPD; SNSPD; Detectors; Infrared; Low light level; Diode lasers; Photons; Scanning electron microscopy; Superconductors; Ti:sapphire lasers |
| Abstract |
We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
Optical Society of America |
Place of Publication |
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Editor |
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| Language |
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Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
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ISBN  |
978-1-55752-859-9 |
Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
Marsili:08 |
Serial |
1243 |
| Permanent link to this record |
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| Author |
Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. |
| Title |
Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе |
Type |
Book Whole |
| Year |
2012 |
Publication |
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Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
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| Keywords |
2DEG, AlGaAs/GaAs, NbN detectors |
| Abstract |
Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники. |
| Address |
Москва |
| Corporate Author |
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Thesis |
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| Publisher |
Прометей, МПГУ |
Place of Publication |
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Editor |
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| Language |
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Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
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ISBN |
978-5-4263-0118-4 |
Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
УДК: 537.311 |
Approved |
no |
| Call Number |
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Serial |
1818 |
| Permanent link to this record |
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| Author |
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
| Volume |
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Issue |
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Pages |
369-371 |
| Keywords |
silicon detector, quantum dot, IR, surface states |
| Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
| Address |
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Thesis |
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Place of Publication |
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Editor |
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| Language |
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Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
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ISBN |
978-5-89513-451-1 |
Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
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Serial |
1154 |
| Permanent link to this record |
