| Records |
| Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
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Journal Article |
| Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
46 |
Issue |
6 |
Pages |
285-287 |
| Keywords |
YBCO HTS HEB |
| Abstract |
For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. |
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1706 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
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Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
Type |
Journal Article |
| Year |
1986 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
64 |
Issue |
4 |
Pages |
889-897 |
| Keywords |
Ge, trapping of free carriers |
| Abstract |
Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). |
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1707 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Observation of the free-exciton spectrum at submillimeter wavelengths |
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Journal Article |
| Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
16 |
Issue |
4 |
Pages |
161-162 |
| Keywords |
Ge, energy spectrum, free excitons |
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1736 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. |
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Submillimeter backward wave tube spectrometer for measuring superconducting film transmission |
Type |
Journal Article |
| Year |
1983 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
| Volume |
26 |
Issue |
5 |
Pages |
134-137 |
| Keywords |
BWO spectroscopy, spectrometer, transmission |
| Abstract |
A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV |
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Russian |
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0032-8162 |
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Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок |
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1713 |
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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
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Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
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Journal Article |
| Year |
1983 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
17 |
Issue |
8 |
Pages |
908-913 |
| Keywords |
BWO spectroscopy, pure semiconductors, residual impurities |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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1714 |
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