|   | 
Details
   web
Records
Author Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S.
Title Thermal relaxation in metal films bottlenecked by diffuson lattice excitations of amorphous substrates Type Miscellaneous
Year 2021 Publication arXiv Abbreviated Journal arXiv
Volume Issue Pages
Keywords metal films, NbN, InOx, Au/Ni, thermal relaxation
Abstract Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature Te of the films as a function of Joule power per unit of area P2D. In all samples, we observe the dependence P2D∝Tne with the exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear T-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1163
Permanent link to this record
 

 
Author Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N.
Title Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012190
Keywords NbN films, insulating membrane
Abstract Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1165
Permanent link to this record
 

 
Author Seliverstov, Sergey V.; Rusova, Anastasia A.; Kaurova, Natalya S.; Voronov, Boris M.; Goltsman, Gregory N.
Title AC-biased superconducting NbN hot-electron bolometer for frequency-domain multiplexing Type Conference Article
Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 120-122
Keywords NbN HEB mixer
Abstract We present the results of characterization of fast and sensitive superconducting antenna-coupled THz direct detector based on NbN hot-electron bolometer (HEB) with AC-bias. We discuss the possibility of implementation of the AC-bias for design the readout system from the multi-element arrays of HEBs using standard technique of frequency-domain multiplexing. We demonstrate experimentally that this approach does not lead to significant deterioration of the HEB sensitivity compared with the value obtained for the same detector with DC- bias. Results of a numerical calculations of the HEB responsivity at AC-bias are in a good agreement with the experiment.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1174
Permanent link to this record
 

 
Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G.
Title Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency Type Conference Article
Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 147-148
Keywords NbN HEB mixers, GaN buffer-layer, IF bandwidth
Abstract In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1175
Permanent link to this record
 

 
Author Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G.
Title Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012135
Keywords silicon nitride O-ring resonator, ORR
Abstract In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1177
Permanent link to this record
 

 
Author Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G.
Title Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012118
Keywords Mach-Zehnder interferometer, MZI
Abstract In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1178
Permanent link to this record
 

 
Author Venediktov, I. O.; Elezov, M. S.; Prokhodtsov, A. I.; Kovalyuk, V. V.; An, P. P.; Golikov, A. D.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N.
Title Study of microheater’s phase modulation for on-chip Kennedy receiver Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012117
Keywords Mach-Zehnder interferometers, MZI
Abstract In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1179
Permanent link to this record
 

 
Author Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R.
Title Development of focusing grating couplers for lithium niobate on insulator platform Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012127
Keywords grating couplers, lithium niobat
Abstract In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1180
Permanent link to this record
 

 
Author Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
Title CMOS compatible nanoantenna-nanodiamond integration Type Conference Article
Year 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1410 Issue Pages 012180
Keywords bull-eye antenna, hyperbolic metamaterials, NV-centers
Abstract Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1182
Permanent link to this record
 

 
Author Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
Title CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide Type Conference Article
Year 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1410 Issue Pages 012179
Keywords coarse wavelength-division multiplexing, Si3N4 rib waveguide
Abstract We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN (down) Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1183
Permanent link to this record