Konstantatos, G., & Sargent, E. H. (2010). Nanostructured materials for photon detection. Nat. Nanotech., 5(6), 391–400.
Abstract: The detection of photons underpins imaging, spectroscopy, fibre-optic communications and time-gated distance measurements. Nanostructured materials are attractive for detection applications because they can be integrated with conventional silicon electronics and flexible, large-area substrates, and can be processed from the solution phase using established techniques such as spin casting, spray coating and layer-by-layer deposition. In addition, their performance has improved rapidly in recent years. Here we review progress in light sensing using nanostructured materials, focusing on solution-processed materials such as colloidal quantum dots and metal nanoparticles. These devices exhibit phenomena such as absorption of ultraviolet light, plasmonic enhancement of absorption, size-based spectral tuning, multiexciton generation, and charge carrier storage in surface and interface traps.
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Stevens, M. J., Baek, B., Dauler, E. A., Kerman, A. J., Molnar, R. J., Hamilton, S. A., et al. (2010). High-order temporal coherences of
chaotic and laser light. Opt. Express, 18(2), 1430–1437.
Abstract: We demonstrate a new approach to measuring high-order temporal coherences that uses a four-element superconducting nanowire single-photon detector. The four independent, interleaved single-photon-sensitive elements parse a single spatial mode of an optical beam over dimensions smaller than the minimum diffraction-limited spot size. Integrating this device with four-channel time-tagging electronics to generate multi-start, multi-stop histograms enables measurement of temporal coherences up to fourth order for a continuous range of all associated time delays. We observe high-order photon bunching from a chaotic, pseudo-thermal light source, measuring maximum third- and fourth-order coherence values of 5.87 ± 0.17 and 23.1 ± 1.8, respectively, in agreement with the theoretically predicted values of 3! = 6 and 4! = 24. Laser light, by contrast, is confirmed to have coherence values of approximately 1 for second, third and fourth orders at all time delays.
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Zhong, T., Hu, X., Wong, F. N. C., Berggren, K. K., Roberts, T. D., & Battle, P. (2010). High-quality fiber-optic polarization entanglement distribution at 1.3 μm telecom wavelength. Opt. Lett., 35(9), 1392–1394.
Abstract: We demonstrate high-quality distribution of 1.3 μm polarization-entangled photons generated from a fiber-coupled periodically poled KTiOPO4 waveguide over 200 m fiber-optic cables. Time-multiplexed measurements with a 19% efficient superconducting nanowire single-photon detector at the remote location show a detected flux of 5.8 pairs / s at a pump power of 25 μW and an average two-photon quantum-interference visibility of 97.7% without subtraction of accidentals.
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Mannino, G., Spinella, C., Ruggeri, R., La Magna, A., Fisicaro, G., Fazio, E., et al. (2010). Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation. Appl. Phys. Lett., 97(2), 3.
Abstract: We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Jang, Y. R., Yoo, K. - H., & Park, S. M. (2010). Rapid thermal annealing of ZnO thin films grown at room temperature. J. Vac. Sci. Technol. A, 28(2), 4.
Abstract: The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.
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