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Author Hajenius, M.; Yang, Z. Q.; Gao, J. R.; Baselmans, J. J. A.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. url  doi
openurl 
  Title Optimized sensitivity of NbN hot electron bolometer mixers by annealing Type Journal Article
  Year 2007 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 17 Issue 2 Pages 399-402  
  Keywords NbN HEB mixers  
  Abstract We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K.  
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  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN (up) Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1426  
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Author Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Y.; Shcherbatenko, M.; Korneev, A.; Pernice, W.; Goltsman, G. doi  openurl
  Title Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application Type Conference Article
  Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 917 Issue Pages 062032  
  Keywords SSPD, SNSPD, waveguide  
  Abstract With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1140  
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Author Korneev, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Pernice, W.; An, P.; Golikov, A.; Zubkova, E.; Goltsman, G. url  doi
openurl 
  Title Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits Type Conference Article
  Year 2017 Publication 16th ISEC Abbreviated Journal 16th ISEC  
  Volume Issue Pages 1-3  
  Keywords SSPD, SNSPD  
  Abstract We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications.  
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  ISSN ISBN (up) Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 8314200 Serial 1200  
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Author Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. doi  openurl
  Title Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform Type Conference Article
  Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 917 Issue Pages 062042  
  Keywords Si3N4, Bragg waveguides  
  Abstract We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1141  
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Author Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N. doi  openurl
  Title Optimisation of spontaneous four-wave mixing in a ring microcavity Type Conference Article
  Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 47 Issue 10 Pages 887-891  
  Keywords ring microcavity  
  Abstract Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1142  
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Author Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. doi  openurl
  Title Resonant terahertz detection using graphene plasmons Type Journal Article
  Year 2018 Publication Nat. Commun. Abbreviated Journal Nat. Commun.  
  Volume 9 Issue Pages 5392 (1 to 8)  
  Keywords THz, graphene plasmons  
  Abstract Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications.  
  Address Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru  
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  Series Volume Series Issue Edition  
  ISSN 2041-1723 ISBN (up) Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1148  
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
openurl 
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Journal Article
  Year 2019 Publication Phys. Status Solidi RRL Abbreviated Journal Phys. Status Solidi RRL  
  Volume 13 Issue 9 Pages 1900187-(1-6)  
  Keywords  
  Abstract For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.  
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  Series Volume Series Issue Edition  
  ISSN 1862-6254 ISBN (up) Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1149  
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Author Семенов, Александр Владимирович pdf  openurl
  Title Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников Type Manuscript
  Year 2010 Publication М. МПГУ Abbreviated Journal  
  Volume Issue Pages  
  Keywords SSPD, SNSPD, response  
  Abstract  
  Address  
  Corporate Author Thesis Ph.D. thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN (up) Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1150  
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Author Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. url  doi
openurl 
  Title Planar Schottky diode with a Γ-shaped anode suspended bridge Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012154  
  Keywords Schottky diode, GaAs, InP substrate  
  Abstract In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN (up) Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1152  
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Author Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012156  
  Keywords Shottky diode, THz, direct detector, multipixel camera  
  Abstract In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN (up) Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1153  
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