Records |
Author |
Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. |
Title |
9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Volume |
|
Issue |
|
Pages |
337-348 |
Keywords |
YBCO HTS HEB mixers |
Abstract |
Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1615 |
Permanent link to this record |
|
|
|
Author |
Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Mueller, E. R.; Waldman, J.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenco, S. I.; Svechnikov, S. I.; Yagoubov, P. A.; Gershenzon, E. M. |
Title |
Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Volume |
|
Issue |
|
Pages |
584-600 |
Keywords |
NbN HEB mixers |
Abstract |
We describe an investigation of a NbN HEB mixer for 2.5 THz. An intrinsic conversion loss of 23 dB has been measured with a two-laser measurement technique. The conversion loss was limited by the LO power available and is expected to decrease to 10 dB or less when sufficient LO power is available. For this initial experiment we used a prototype device which is directly coupled to the laser beams. We present results for a back-short technique that improves the optical coupling to the device and describe our progress for an antenna-coupled device with a smaller dimension. Based on our measured data for conversion loss and device output noise level, we predict that NbN HEB mixers will be capable of achieving DSB receiver noise temperatures of ten times the quantum noise limit in the THz range. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1616 |
Permanent link to this record |
|
|
|
Author |
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
Title |
Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
Type |
Conference Article |
Year |
1996 |
Publication |
Czech. J. Phys. |
Abbreviated Journal |
Czech. J. Phys. |
Volume |
46 |
Issue |
S2 |
Pages |
857-858 |
Keywords |
NbC films |
Abstract |
Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0011-4626 |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1617 |
Permanent link to this record |
|
|
|
Author |
Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F. |
Title |
Quasioptical superconducting hot electron bolometer for submillmeter waves |
Type |
Journal Article |
Year |
1996 |
Publication |
Int. J. of Infrared and Millimeter Waves |
Abbreviated Journal |
Int. J. of Infrared and Millimeter Waves |
Volume |
17 |
Issue |
2 |
Pages |
317-331 |
Keywords |
NbN HEB |
Abstract |
We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0195-9271 |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1618 |
Permanent link to this record |
|
|
|
Author |
Zorin, M.; Gol'tsman, G.N.; Karasik, B.S.; Elantev, A.I.; Gershenzon, E.M.; Lindgren, M.; Danerud, M.; Winkler, D. |
Title |
Optical mixing in thin YBa2Cu3O7-x films |
Type |
Journal Article |
Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
5 |
Issue |
2 |
Pages |
2431-2434 |
Keywords |
YBCO HTS HEB mixers |
Abstract |
High quality, j/sub c/ (77 K)>10/sup 6/ A/cm/sup 2/, epitaxial YBa2Cu3O7-x films of 50 nm thickness were patterned into ten parallel 1 /spl mu/m wide strips. The film structure was coupled to a single-mode fiber. Mixer response was obtained at 0.78 /spl mu/m using laser frequency modulation and an optical delay line. Using two semiconductor lasers at 1.55 /spl mu/m wavelength the beating signal was used to measure the photoresponse up to 18 GHz. Nonequilibrium photoresponse in the resistive state of the superconductor was observed. Bolometric response dominates up to 3 GHz, after which the nonequilibrium response is constant up to the frequency limit of our registration system. Using an electron heating model the influence of different thermal processes on the conversion loss has been analyzed. Ways of increasing the sensitivity are also discussed. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1051-8223 |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1619 |
Permanent link to this record |
|
|
|
Author |
Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M. |
Title |
High speed current switching of homogeneous YBaCuO film between superconducting and resistive states |
Type |
Journal Article |
Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
5 |
Issue |
2 |
Pages |
3042-3045 |
Keywords |
YBCO HTS HEB switches |
Abstract |
Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1051-8223 |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1620 |
Permanent link to this record |
|
|
|
Author |
Gol'tsman, G.; Kouminov, P.; Goghidze, I.; Gershenzon, E. |
Title |
Nonequilibrium kinetic inductive response of YBCO thin films to low power laser pulses |
Type |
Journal Article |
Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
5 |
Issue |
2 |
Pages |
2591-2594 |
Keywords |
YBCO HTS KID |
Abstract |
We have discovered a transient nonequilibrium kinetic inductive voltage response of YBCO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 /spl mu/m and 1.54 /spl mu/m wavelength. By increasing the sensitivity of the read-out system with 100 ps resolution time and diminishing the light intensity (fluence 0.1-2 /spl mu/J/cm/sup 2/) and transport current (density /spl les/10/sup 5/ A/cm/sup 2/) we were able to observe a peculiar bipolar signal form with nearly equal amplitudes for each sign. The integration of the kinetic inductive response over time gives the result which is qualitatively, of the same form as the response in the resistive and normal states: the nonequilibrium picosecond scale component is followed by the bolometric nanosecond component. The nonequilibrium response is interpreted as suppression of the order parameter by excess quasiparticles followed by a change both in resistance (for the resistive state) and in kinetic inductance (for the superconducting state). |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1051-8223 |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1621 |
Permanent link to this record |
|
|
|
Author |
Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
Title |
Hot electron quasioptical NbN superconducting mixer |
Type |
Journal Article |
Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
5 |
Issue |
2 |
Pages |
2232-2235 |
Keywords |
NbN HEB mixers |
Abstract |
Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1051-8223 |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1622 |
Permanent link to this record |
|
|
|
Author |
Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse |
Type |
Journal Article |
Year |
1995 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
Volume |
77 |
Issue |
8 |
Pages |
4064-4070 |
Keywords |
YBCO HTS switches |
Abstract |
A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0021-8979 |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1623 |
Permanent link to this record |
|
|
|
Author |
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
Type |
Journal Article |
Year |
1995 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
61 |
Issue |
7 |
Pages |
591-595 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1624 |
Permanent link to this record |