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Smirnov, K. V., Vakhtomin, Y. B., Divochiy, A. V., Ozhegov, R. V., Pentin, I. V., Slivinskaya, E. V., et al. (2009). Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures. In Proc. Progress In Electromagnetics Research Symp. (pp. 863–864). Moscow, Russia.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.
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McCarthy, A., Krichel, N. J., Gemmell, N. R., Ren, X., Tanner, M. G., Dorenbos, S. N., et al. (2013). Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection. Opt. Express, 21(7), 8904–8915.
Abstract: This paper highlights a significant advance in time-of-flight depth imaging: by using a scanning transceiver which incorporated a free-running, low noise superconducting nanowire single-photon detector, we were able to obtain centimeter resolution depth images of low-signature objects in daylight at stand-off distances of the order of one kilometer at the relatively eye-safe wavelength of 1560 nm. The detector used had an efficiency of 18% at 1 kHz dark count rate, and the overall system jitter was ~100 ps. The depth images were acquired by illuminating the scene with an optical output power level of less than 250 µW average, and using per-pixel dwell times in the millisecond regime.
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Manus, M. K. M., Kash, J. A., Steen, S. E., Polonsky, S., Tsang, J. C., Knebel, D. R., et al. (2000). PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis. Microelectronics Reliability, 40, 1353–1358.
Abstract: Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors.
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Marsili, F., Verma, V. B., Stern, J. A., Harrington, S., Lita, A. E., Gerrits, T., et al. (2013). Detecting single infrared photons with 93% system efficiency. Nat. Photon., 7(3), 210–214.
Abstract: Single-photon detectors1 at near-infrared wavelengths with high system detection efficiency (>90%), low dark count rate (<1 c.p.s.), low timing jitter (<100 ps) and short reset time (<100 ns) would enable landmark experiments in a variety of fields2, 3, 4, 5, 6. Although some of the existing approaches to single-photon detection fulfil one or two of the above specifications1, to date, no detector has met all of the specifications simultaneously. Here, we report on a fibre-coupled single-photon detection system that uses superconducting nanowire single-photon detectors7 and closely approaches the ideal performance of single-photon detectors. Our detector system has a system detection efficiency (including optical coupling losses) greater than 90% in the wavelength range λ = 1,520–1,610 nm, with a device dark count rate (measured with the device shielded from any background radiation) of ~1 c.p.s., timing jitter of ~150 ps full-width at half-maximum (FWHM) and reset time of 40 ns.
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Kitaygorsky, J., Zhang, J., Verevkin, A., Sergeev, A., Korneev, A., Matvienko, V., et al. (2005). Origin of dark counts in nanostructured NbN single-photon detectors. IEEE Trans. Appl. Supercond., 15(2), 545–548.
Abstract: We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations.
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Zhang, J., Slysz, W., Verevkin, A., Okunev, O., Chulkova, G., Korneev, A., et al. (2003). Response time characterization of NbN superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 13(2), 180–183.
Abstract: We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
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Driessen, E. F. C., Braakman, F. R., Reiger, E. M., Dorenbos, S. N., Zwiller, V., & de Dood, M. J. A. (2009). Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors. Eur. Phys. J. Appl. Phys., 47, 10701.
Abstract: We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity.
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Тархов, М. А. (2016). Разработка сверхпроводниковых однофотонных детекторов с повышенной спектральной чувствительностью и быстродействием. Ph.D. thesis, НИЦ "Курчатовский институт", .
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Тархов, М. А. (2016). Разработка сверхпроводниковых однофотонных детекторов с повышенной спектральной чувствительностью и быстродействием. Автореферат.
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Shcheslavskiy, V., Morozov, P., Divochiy, A., Vakhtomin, Y., Smirnov, K., & Becker, W. (2016). Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector. Rev. Sci. Instrum., 87, 053117 (1 to 5).
Abstract: Time resolution is one of the main characteristics of the single photon detectors besides quantum efficiency and dark count rate. We demonstrate here an ultrafast time-correlated single photon counting (TCSPC) setup consisting of a newly developed single photon counting board SPC-150NX and a superconducting NbN single photon detector with a sensitive area of 7 × 7 μm. The combination delivers a record instrument response function with a full width at half maximum of 17.8 ps and system quantum efficiency ~5% at wavelength of 1560 nm. A calculation of the root mean square value of the timing jitter for channels with counts more than 1% of the peak value yielded about 7.6 ps. The setup has also good timing stability of the detector–TCSPC board.
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