Records |
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
Title |
Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state |
Type |
Journal Article |
Year |
1988 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
Volume |
14 |
Issue |
7 |
Pages |
414-420 |
Keywords |
HEB |
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Duplicated as 1697 |
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236 |
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Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Limiting characteristic of fast superconducting bolometers |
Type |
Journal Article |
Year |
1989 |
Publication |
Sov. Phys.-Tech. Phys. |
Abbreviated Journal |
Sov. Phys.-Tech. Phys. |
Volume |
34 |
Issue |
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Pages |
195-199 |
Keywords |
HEB |
Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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О предельных характеристиках быстродействующих серхпроводниковых болометров |
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237 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. |
Title |
Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state |
Type |
Journal Article |
Year |
1990 |
Publication |
Sov. Supercond. |
Abbreviated Journal |
Sov. Supercond. |
Volume |
3 |
Issue |
10 |
Pages |
1582-1597 |
Keywords |
HEB mixers |
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240 |
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Author |
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
Title |
Electron-phonon interaction in ultrathin Nb films |
Type |
Journal Article |
Year |
1990 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
70 |
Issue |
3 |
Pages |
505-511 |
Keywords |
Nb films |
Abstract |
A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
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241 |
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Author |
Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
Type |
Journal Article |
Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
Volume |
75 |
Issue |
7 |
Pages |
3695-3697 |
Keywords |
NbN HEB |
Abstract |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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Author |
Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
Type |
Conference Article |
Year |
1998 |
Publication |
Proc. 28th European Microwave Conf. |
Abbreviated Journal |
Proc. 28th European Microwave Conf. |
Volume |
1 |
Issue |
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Pages |
294-299 |
Keywords |
NbN HEB mixers |
Abstract |
In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point. |
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28th European Microwave Conference |
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1580 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
Title |
Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz |
Type |
Conference Article |
Year |
1998 |
Publication |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
105-114 |
Keywords |
NbN HEB mixers |
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1587 |
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Author |
Semenov, A. D.; Hübers, H.–W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
Title |
Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer |
Type |
Conference Article |
Year |
2000 |
Publication |
Proc. 11th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 11th Int. Symp. Space Terahertz Technol. |
Volume |
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Pages |
39-48 |
Keywords |
NbN HEB mixers |
Abstract |
We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens. |
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no |
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305 |
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Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M. |
Title |
Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies |
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Conference Article |
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2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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Pages |
286-296 |
Keywords |
NbN HEB mixers |
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San Diego, CA, USA |
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no |
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323 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Title |
Kinetics of electron and hole binding into excitons in germanium |
Type |
Journal Article |
Year |
1983 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
57 |
Issue |
2 |
Pages |
369-376 |
Keywords |
Ge, electron and hole binding |
Abstract |
The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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no |
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1711 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Heating of electrons in a superconductor in the resistive state by electromagnetic radiation |
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Journal Article |
Year |
1984 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
59 |
Issue |
2 |
Pages |
442-450 |
Keywords |
Nb HEB |
Abstract |
The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction. |
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RPLAB @ phisix @ |
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983 |
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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
Title |
Character of submillimeter photoconductivity in n-lnSb |
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Journal Article |
Year |
1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
49 |
Issue |
1 |
Pages |
121-128 |
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Abstract |
A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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985 |
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Gershenzon, E. M.; Goltsman, G. N. |
Title |
Zeeman effect in excited-states of donors in germanium |
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Journal Article |
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1972 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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6 |
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3 |
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509 |
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Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
Title |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
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Journal Article |
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1995 |
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JETP |
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JETP |
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80 |
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5 |
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960-964 |
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The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
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RPLAB @ phisix @ |
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989 |
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Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W. |
Title |
NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers |
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Conference Article |
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1999 |
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Proc. SPIE |
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Proc. SPIE |
Volume |
3828 |
Issue |
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Pages |
410-416 |
Keywords |
NbN HEB mixers |
Abstract |
We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed. |
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Spie |
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Chamberlain, J.M. |
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Terahertz Spectroscopy and Applications II |
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1477 |
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