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| Author | Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. | ||||
| Title | Carbon nanotubes as exceptional electrically driven on-chip light sources | Type | Miscellaneous | ||
| Year | 2016 | Publication | 2Physics | Abbreviated Journal | 2Physics |
| Volume | Issue | Pages | |||
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique. |
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ISSN  |
2372-1782 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1219 | |||
| Permanent link to this record | |||||
| Author | Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. | ||||
| Title | Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation | Type | Journal Article | ||
| Year | 2021 | Publication | Adv. Electron. Mater. | Abbreviated Journal | Adv. Electron. Mater. |
| Volume | 7 | Issue | 3 | Pages | 2000872 |
| Keywords | SWCNT transistors | ||||
| Abstract | The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN |
2199-160X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1843 | |||
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| Author | Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. | ||||
| Title | Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers | Type | Journal Article | ||
| Year | 2017 | Publication | Beilstein J. Nanotechnol. | Abbreviated Journal | Beilstein J. Nanotechnol. |
| Volume | 8 | Issue | Pages | 38-44 | |
| Keywords | carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials | ||||
| Abstract | Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources. | ||||
| Address | Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany | ||||
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| ISSN |
2190-4286 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:28144563; PMCID:PMC5238692 | Approved | no | ||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1109 | ||
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| Author | Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. | ||||
| Title | Response of carbon nanotube film transistor to the THz radiation | Type | Conference Article | ||
| Year | 2018 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 195 | Issue | Pages | 05012 (1 to 2) | |
| Keywords | field-effect transistor, FET, carbon nanotube, CNT | ||||
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| ISSN |
2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1317 | |||
| Permanent link to this record | |||||
| Author | Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. | ||||
| Title | Carbon nanotube based terahertz radiation detectors | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012208 (1 to 5) | |
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested. | ||||
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| ISSN |
1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1270 | |||
| Permanent link to this record | |||||