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Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P. |
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Title |
Terahertz imaging system based on superconducting heterodyne integrated receiver |
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Conference Article |
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Year |
2014 |
Publication |
Proc. THz and Security Applications |
Abbreviated Journal |
Proc. THz and Security Applications |
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113-125 |
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Keywords |
SIS mixer, SIR, THz imaging |
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Abstract |
The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.
In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K. |
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Springer Netherlands |
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Dordrecht |
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Corsi, C.; Sizov, F. |
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978-94-017-8828-1 |
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1368 |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
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Title |
Relaxation of the resistive superconducting state in boron-doped diamond films |
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Journal Article |
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Year |
2016 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
93 |
Issue |
6 |
Pages |
064506 |
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Keywords |
boron-doped diamond films, resistive superconducting state, relaxation time |
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Abstract |
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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2469-9950 |
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1167 |
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Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
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Title |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
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Conference Article |
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Year |
2018 |
Publication |
Materials Today: Proc. |
Abbreviated Journal |
Materials Today: Proc. |
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Volume |
5 |
Issue |
13 |
Pages |
27301-27306 |
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Keywords |
graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor |
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Abstract |
We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. |
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2214-7853 |
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1316 |
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Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
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Title |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
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Journal Article |
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Year |
2021 |
Publication |
Adv. Electron. Mater. |
Abbreviated Journal |
Adv. Electron. Mater. |
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Volume |
7 |
Issue |
3 |
Pages |
2000872 |
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Keywords |
SWCNT transistors |
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The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. |
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2199-160X |
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1843 |
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Author |
Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
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Title |
Response of carbon nanotube film transistor to the THz radiation |
Type |
Conference Article |
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Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
195 |
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05012 (1 to 2) |
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Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
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2100-014X |
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1317 |
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Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
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Title |
Response of graphene based gated nanodevices exposed to THz radiation |
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Conference Article |
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Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
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103 |
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10003 (1 to 2) |
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Keywords |
graphene field-effect transistor, FET |
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In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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2100-014X |
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1350 |
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Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
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Title |
Tunnel field-effect transistors for sensitive terahertz detection |
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Journal Article |
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Year |
2021 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
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12 |
Issue |
1 |
Pages |
543 |
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Keywords |
field-effect transistors, bilayer graphene, BLG |
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The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
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Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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English |
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2041-1723 |
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PMID:33483488; PMCID:PMC7822863 |
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1261 |
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Baksheeva, K.; Vdovydchenko, A.; Gorshkov, K.; Ozhegov, R.; Kinev, N.; Koshelets, V.; Goltsman, G. |
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Title |
Study of human skin radiation in the terahertz frequency range |
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Conference Article |
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Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1410 |
Issue |
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Pages |
012076 (1 to 5) |
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Keywords |
SIS mixer, SIR, applications, medicine, sympathetic nervous system, SNS |
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The radiation of human skin in the terahertz frequency range under the influence of mental stresses has been studied in the current work. An experimental setup for observation of changes in human skin radiation, which occur under the influence of psychological stresses, by means of a superconducting integrated receiver has been developed. More than 30 volunteers participate in these studies, which allows us to verify presence of correlation between the signals from the superconducting integrated terahertz receiver and other sensors that monitor human mental stress. |
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1742-6588 |
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1272 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
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Title |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
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Conference Article |
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Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1124 |
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Pages |
051054 |
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Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
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We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1742-6588 |
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1300 |
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Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
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Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
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Conference Article |
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Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1124 |
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051050 (1 to 5) |
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field-effect transistor, FET, carbon nanotube, CNT |
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In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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