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Author Kozorezov, A. G.; Lambert, C.; Marsili, F.; Stevens, M. J.; Verma, V. B.; Stern, J. A.; Horansky, R.; Dyer, S.; Duff, S.; Pappas, D. P.; Lita, A.; Shaw, M. D.; Mirin, R. P.; Sae Woo Nam
Title Quasiparticle recombination in hotspots in superconducting current-carrying nanowires Type Journal Article
Year 2015 Publication Abbreviated Journal Phys. Rev. B
Volume 92 Issue 6 Pages
Keywords
Abstract We describe a kinetic model of recombination of non-equilibrium quasiparticles generated by single photon absorption in superconducting current-carrying nanowires. The model is developed to interpret two-photon detection experiments in which a single photon does not possess sufficient energy for breaking superconductivity at a fixed low bias current. We show that quasiparticle self- recombination in relaxing hotspot dominates diffusion expansion effects and explains the observed strong bias current, wavelength and temperature dependencies of hotspot relaxation in tungsten silicide superconducting nanowire single-photon detectors.
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Language English Summary Language Original Title
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Notes Approved no
Call Number RPLAB @ alex_kazakov @ Serial 1003
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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M.
Title Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 49 Issue 15 Pages 10484-10494
Keywords Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy
Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.
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Corporate Author Thesis
Publisher American Physical Society Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN (up) ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1005
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Author Sergeev, A.; Mitin, V.
Title Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials Type Journal Article
Year 2000 Publication Phys. Rev. B. Abbreviated Journal Phys. Rev. B.
Volume 61 Issue 9 Pages 6041-6047
Keywords disordered conductors, scattering potential, electron-phonon interaction
Abstract Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 307
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Author Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N.
Title Time delay of resistive-state formation in superconducting stripes excited by single optical photons Type Journal Article
Year 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 67 Issue 13 Pages 132508 (1 to 4)
Keywords NbN SSPD, SNSPD
Abstract We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1519
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Author Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I.
Title Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films Type Journal Article
Year 1998 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 57 Issue 24 Pages 15623-15628
Keywords NbC films
Abstract A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1585
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Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time Type Journal Article
Year 1996 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.
Volume 53 Issue 12 Pages R7592-R7595
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
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Series Editor Series Title Abbreviated Series Title
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ISSN (up) 0163-1829 ISBN Medium
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Notes PMID:9982274 Approved no
Call Number Serial 1612
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Author Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation Type Journal Article
Year 1994 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.
Volume 49 Issue 13 Pages 9091-9096
Keywords YBCO films
Abstract The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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Language Summary Language Original Title
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ISSN (up) 0163-1829 ISBN Medium
Area Expedition Conference
Notes PMID:10009690 Approved no
Call Number Serial 1648
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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 56 Issue 16 Pages 10089-10096
Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN (up) 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1766
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Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
Title Electron–phonon interaction in disordered conductors Type Journal Article
Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter
Volume 263-264 Issue Pages 190-192
Keywords disordered conductors, electron-phonon interaction
Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1765
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Author Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C.
Title Optical control of photon tunneling through an array of nanometer-scale cylindrical channels Type Journal Article
Year 2002 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 66 Issue 20 Pages 205414_1-205414_5
Keywords optical mixing
Abstract
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 499
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