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Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
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Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Keywords |
Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
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Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
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Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
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Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
18 |
Issue |
3 |
Pages |
93 |
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Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
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Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
37 |
Issue |
2 |
Pages |
299-304 |
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Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
5 |
Pages |
185-186 |
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Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
2 |
Pages |
63-65 |
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Keywords |
Ge, donors, excited states |
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1740 |
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Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
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Title |
Germanium hot-electron narrow-band detector |
Type |
Journal Article |
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Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
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Volume |
16 |
Issue |
8 |
Pages |
1346 |
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Keywords |
Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
Type |
Journal Article |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
6 |
Pages |
241 |
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Keywords |
Ge, gamma irradiation, defects, impurities |
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1742 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
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Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
40 |
Issue |
2 |
Pages |
311-315 |
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Keywords |
Ge, cyclotron resonance |
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Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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Serial |
1768 |
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Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
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Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Volume |
10 |
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1379-1383 |
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Ge, cyclotron resonance, charged impurities, |
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Serial |
1772 |
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Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
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Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
22 |
Issue |
4 |
Pages |
95-97 |
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Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
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Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Volume |
6 |
Issue |
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362-363 |
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Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Author |
Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Optical mixing in a patterned YBa2Cu3O7-δ thin film |
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Journal Article |
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Year |
1994 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
65 |
Issue |
26 |
Pages |
3398-3400 |
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Keywords |
YBCO HTS HEB mixer, bandwidth |
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Abstract |
Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa2Cu3O7-δ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB. |
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0003-6951 |
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251 |
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Author |
Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
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Journal Article |
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Year |
1998 |
Publication |
Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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Volume |
73 |
Issue |
26 |
Pages |
3938-3940 |
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Keywords |
NbN SSPD, SNSPD |
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Abstract |
The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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1579 |
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Author |
Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Picosecond hot-electron energy relaxation in NbN superconducting photodetectors |
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Journal Article |
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Year |
2000 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
76 |
Issue |
19 |
Pages |
2752-2754 |
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Keywords |
NbN HEB detectors, two-temperature model, IF bandwidth |
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Abstract |
We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. |
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0003-6951 |
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856 |
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