| Records |
| Author |
Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
| Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
75 |
Issue |
7 |
Pages |
3695-3697 |
| Keywords |
NbN HEB |
| Abstract |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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| Author |
Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
| Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
290-302 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
245-257 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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276 |
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Kawamura, J.; Blundell, R.; Tong, C-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
| Title |
Phonon-cooled NbN HEB mixers for submillimeter wavelengths |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
23-28 |
| Keywords |
waveguide NbN HEB mixers |
| Abstract |
The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz. |
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275 |
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Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
| Title |
Gain and noise bandwidth of NbN hot-electron bolometric mixers |
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Journal Article |
| Year |
1997 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
70 |
Issue |
24 |
Pages |
3296-3298 |
| Keywords |
NbN HEB mixers, conversion loss, conversion gain, U-factor technique |
| Abstract |
We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
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279 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz |
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Conference Article |
| Year |
1998 |
Publication |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
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Pages |
105-114 |
| Keywords |
NbN HEB mixers |
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1587 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H. W.; Svechnikov, S.; Voronov, B.; Gol'tsman, G.; Wang, Z. |
| Title |
Hot electron bolometric mixers based on NbN films deposited on MgO substrates |
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Conference Article |
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1999 |
Publication |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
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167 |
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687-690 |
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Barcelona, Spain |
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4th Europ. Conf. on Appl. Superconductivity, Inst. Phys. Conf. Ser. |
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297 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
| Title |
Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz |
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Journal Article |
| Year |
1999 |
Publication |
Supercond. Sci. Technol. |
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12 |
Issue |
11 |
Pages |
748-750 |
| Keywords |
NbN HEB mixers |
| Abstract |
We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz). |
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298 |
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Semenov, A. D.; Hübers, H.–W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer |
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Conference Article |
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2000 |
Publication |
Proc. 11th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 11th Int. Symp. Space Terahertz Technol. |
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39-48 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens. |
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305 |
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Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
| Title |
NbN hot electron bolometric mixers for terahertz receivers |
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Journal Article |
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2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
11 |
Issue |
1 |
Pages |
962-965 |
| Keywords |
NbN HEB mixers |
| Abstract |
Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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