| Author |
Title |
Year |
Publication |
DOI |
| Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
2018 |
Appl. Phys. Lett. |
10.1063/1.5018151 |
| Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. |
Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors |
2015 |
Carbon |
10.1016/j.carbon.2015.01.060 |
| Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
10.1103/PhysRevB.56.10089 |
| Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory |
Signatures of surface magnetic disorder in thin niobium films |
2021 |
IEEE Trans. Appl. Supercond. |
10.1109/TASC.2021.3065281 |
| Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. |
Superconducting microstructures with high impedance |
2020 |
Phys. Solid State |
10.1134/S1063783420090280 |
| Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. |
Noise equivalent temperature difference of a superconducting integrated terahertz receiver |
2009 |
J. Commun. Technol. Electron. |
10.1134/S1064226909060151 |
| Baksheeva, K.; Vdovydchenko, A.; Gorshkov, K.; Ozhegov, R.; Kinev, N.; Koshelets, V.; Goltsman, G. |
Study of human skin radiation in the terahertz frequency range |
2019 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/1410/1/012076 |
| Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
2018 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/1124/5/051054 |
| Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
2018 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/1124/5/051050 |
| Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
Towards to the development of THz detectors based on carbon nanostructures |
2018 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/1092/1/012039 |
| Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
Tunnel field-effect transistors for sensitive terahertz detection |
2021 |
Nat. Commun. |
10.1038/s41467-020-20721-z |
| Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
Response of carbon nanotube film transistor to the THz radiation |
2018 |
EPJ Web Conf. |
10.1051/epjconf/201819505012 |
| Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
Response of graphene based gated nanodevices exposed to THz radiation |
2015 |
EPJ Web of Conferences |
10.1051/epjconf/201510310003 |
| Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
2021 |
Adv. Electron. Mater. |
10.1002/aelm.202000872 |
| Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
2018 |
Materials Today: Proc. |
10.1016/j.matpr.2018.08.155 |
