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| Author |
Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
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The electron-phonon relaxation time in thin superconducting titanium nitride films |
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Journal Article |
| Year |
2013 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
103 |
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25 |
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252602 (1 to 4) |
| Keywords |
disordered TiN films, electron-phonon relaxation time |
| Abstract |
We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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RPLAB @ kovalyuk @ |
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941 |
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Gurovich, B. A.; Tarkhov, M. A.; Prikhod'ko, K. E.; Kuleshova, E. A.; Komarov, D. A.; Stolyarov, V. L.; Olshanskii, E. D.; Goncharov, B. V.; Goncharova, D. A.; Kutuzov, L. V.; Domantovskii, A. G. |
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Controlled modification of superconducting properties of NbN ultrathin films under composite ion beam irradiation |
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Journal Article |
| Year |
2014 |
Publication |
Nanotechnologies in Russia |
Abbreviated Journal |
Nanotechnologies in Russia |
| Volume |
9 |
Issue |
7 |
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386-390 |
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superconducting NbN films composite ion beam irradiation protoning |
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In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ~1–3) keV are presented. HRTEM analysis showed that the initial films on the sapphire substrate in orientation “c-cut†are characterized by a grain size essentially exceeding the film thickness, while on the other substrates the size of grains corresponds to the thickness of film. Using XPS analysis, it was shown that in the initial films the atomic ratio of Nb and N is 0.51/0.49, respectively, the percentage of oxygen being lower than 5%. For ultrathin films 5 nm in thickness, the critical temperature of transit to superconducting state (T c) is found to be ~3.6 K and the density of critical current is jc ~8MA/cm2. In the work it is experimentally determined that the irradiation of NbN films by composite ion beams leads to the controlled modification of its superconducting properties due to the process of selective substitution of nitrogen atoms on the oxygen atoms. |
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Gol’tsman, G.; Korneev, A.; Tarkhov, M.; Seleznev, V.; Divochiy, A.; Minaeva, O.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K. |
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Middle-infrared ultrafast superconducting single photon detector |
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Conference Article |
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2007 |
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32nd IRMW / 15th ICTE |
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32nd IRMW / 15th ICTE |
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115-116 |
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SSPD, SNSPD |
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We present the results of the research on quantum efficiency of the ultrathin-film superconducting single-photon detectors (SSPD) in the wavelength rage from 1 mum to 5.7 mum. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of ~1 % at 5.7 mum wavelength with the SSPD made from 4-nm-thick NbN film. In a pursuit of further performance improvement we endeavored SSPD fabricating from 4-nm-thick MoRe film as an alternative material. The MoRe film exhibited transition temperature of 7.7K, critical current density at 4.2 K temperature was 1.1times10 6 A/cm 2 , and diffusivity 1.73 cmVs. The single-photon response was observed with MoRe SSPD at 1.3 mum wavelength with quantum efficiency estimated to be 0.04%. |
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Chulkova, G.; Milostnaya, I.; Tarkhov, M.; Korneev, A.; Minaeva, O.; Voronov, B.; Divochiy, A.; Gol'tsman, G.; Kitaygorsky, J.; Pan, D.; Sobolewski, R. |
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Superconducting single-photon nanostructured detectors for advanced optical applications |
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Conference Article |
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2006 |
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Proc. Symposium on Photonics Technologies for 7th Framework Program |
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400 |
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SSPD, SNSPD |
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We present superconducting single-photon detectors (SSPDs) based on NbN thin-film nanostructures and operated at liquid helium temperatures. The SSPDs are made of ultrathin NbN films (2.5-4 nm thick, Tc= 9-11K) as meander-shaped nanowires covering the area of 10× 10 µm2. Our detectors are operated at the temperature well below the critical temperature Tc and are DC biased by a current Ib close to the meander critical current Ic. The operation principle of the detector is based on the use of the resistive region in a narrow ultra-thin superconducting stripe upon the absorption of an incident photon. The developed devices demonstrate high sensitivity and response speed in a broadband range from UV to mid-IR (up to 6 µm), making them very attractive for advanced optical technologies, which require efficient detectors of single quanta and low-density optical radiation. |
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RPLAB @ sasha @ chulkova2006superconducting |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R. |
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Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders |
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2007 |
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Proc. APS March Meeting |
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Proc. APS March Meeting |
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52 |
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1 |
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L9.00013 |
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We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature. |
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