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Author Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G. url  doi
openurl 
  Title Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices Type Journal Article
  Year 2011 Publication Tech. Phys. Abbreviated Journal Tech. Phys.  
  Volume 56 Issue 6 Pages 826-830  
  Keywords GaAs/AlGaAs superlattices  
  Abstract The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 1063-7842 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1214  
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Author Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. url  doi
openurl 
  Title Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers Type Journal Article
  Year 2012 Publication Tech. Phys. Abbreviated Journal Tech. Phys.  
  Volume 57 Issue 7 Pages 971-974  
  Keywords semiconducting superlattice frequency multiplier, NbN HEB mixers  
  Abstract We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN (down) 1063-7842 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1378  
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Author Smirnov, A. V.; Karmantsov, M. S.; Smirnov, K. V.; Vakhtomin, Y. B.; Masterov, D. V.; Tarkhov, M. A.; Pavlov, S. A.; Parafin, A. E. url  doi
openurl 
  Title Terahertz response of thin-film YBCO bolometers Type Journal Article
  Year 2012 Publication Tech. Phys. Abbreviated Journal Tech. Phys.  
  Volume 57 Issue 12 Pages 1716-1719  
  Keywords YBCO HEB  
  Abstract The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN (down) 1063-7842 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1817  
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Author Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. url  doi
openurl 
  Title Superconducting microstructures with high impedance Type Journal Article
  Year 2020 Publication Phys. Solid State Abbreviated Journal Phys. Solid State  
  Volume 62 Issue 9 Pages 1539-1542  
  Keywords superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance  
  Abstract The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 1063-7834 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1789  
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. url  doi
openurl 
  Title Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons Type Journal Article
  Year 2010 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 44 Issue 11 Pages 1427-1429  
  Keywords 2DEG, AlGaAs/GaAs heterostructures mixers  
  Abstract The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).  
  Address  
  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Approved no  
  Call Number Serial 1216  
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