| Records |
| Author |
Jiang, L.; Antipov, S. V.; Voronov, B. M.; Gol'tsman, G. N.; Zhang, W.; Li, N.; Lin, Z. H.; Yao, Q. J.; Miao, W.; Shi, S. C.; Svechnikov, S. I.; Vakhtomin, Y. B. |
| Title |
Characterization of the performance of a quasi-optical NbN superconducting HEB mixer |
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Journal Article |
| Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
17 |
Issue |
2 |
Pages |
395-398 |
| Keywords |
NbN HEB mixers, noise temperature |
| Abstract |
In this paper we focus mainly on the investigation of the performance of a quasi-optical (planar log-spiral antenna) phonon-cooled NbN superconducting hot electron bolometer (HEB) mixer, which is cryogenically cooled by a close-cycled 4-K cryocooler, at 500 and 850 GHz frequency bands. The mixer's noise performance, stability of IF output power, and local oscillator (LO) power requirement are characterized for three NbN superconducting HEB devices of different sizes. The transmission characteristics of Mylar and Zitex films with incidence waves of an elliptical polarization are also examined by measuring the mixer's noise temperature. The lowest receiver noise temperatures (with no corrections) of 750 and 1100 K are measured at 500 and 850 GHz, respectively. Experimental results also demonstrate that the bigger the HEB device is, the higher the stability of IF output power becomes. |
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1429 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz |
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Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
9 |
Issue |
2 |
Pages |
4217-4220 |
| Keywords |
NbN HEB mixers |
| Abstract |
NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region. |
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1051-8223 |
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1568 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies |
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Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
9 |
Issue |
2 |
Pages |
3757-3760 |
| Keywords |
NbN HEB mixers |
| Abstract |
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. |
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1569 |
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Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. |
| Title |
Noise characteristics of a NbN hot-electron mixer at 2.5 THz |
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Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3572-3575 |
| Keywords |
NbN HEB mixers |
| Abstract |
The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation. |
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1594 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
| Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
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Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
| Keywords |
NbN HEB mixers |
| Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1595 |
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