| Records |
| Author |
Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
| Title |
High resolution THz gas spectrometer based on semiconductor and superconductor devices |
Type |
Conference Article |
| Year |
2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
132 |
Issue |
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Pages |
02001 (1 to 2) |
| Keywords |
NbN HEB mixers, detectors, THz spectroscopy |
| Abstract |
The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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1328 |
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Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Khabibullin, R. A.; Shchavruk, N. V.; Smirnov, K. V.; Silaev, A. A. |
| Title |
Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer |
Type |
Journal Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
04004 (1 to 2) |
| Keywords |
NbN HEB, QCL |
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2100-014X |
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3rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018) |
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no |
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Serial |
1808 |
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| Author |
Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G. |
| Title |
Input bandwidth of hot electron bolometer with spiral antenna |
Type |
Journal Article |
| Year |
2012 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
| Volume |
2 |
Issue |
4 |
Pages |
400-405 |
| Keywords |
NbN HEB bolometers bandwidth, log-spiral antenna |
| Abstract |
We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device. |
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| ISSN |
2156-342X |
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no |
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Serial |
1161 |
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| Author |
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
| Title |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. Terahertz Sci. Technol. |
| Volume |
7 |
Issue |
1 |
Pages |
53-59 |
| Keywords |
NbN HEB mixer |
| Abstract |
In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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| ISSN |
2156-3446 |
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no |
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Serial |
1330 |
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| Author |
Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
| Title |
Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
Type |
Journal Article |
| Year |
2019 |
Publication |
AIP Advances |
Abbreviated Journal |
AIP Advances |
| Volume |
9 |
Issue |
10 |
Pages |
105220 |
| Keywords |
GaAs/AlGaAs superlattice, SL, NbN HEB |
| Abstract |
Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level. |
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Edition |
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| ISSN |
2158-3226 |
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no |
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1274 |
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