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Author | Селиверстов, С. В.; Финкель, М. И.; Рябчун, С. А.; Воронов, Б. М.; Каурова, Н. С.; Селезнев, В. А.; Смирнов, К. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Гольцман, Г. Н. | ||||
Title | Терагерцевый сверхпроводниковый детектор с аттоджоулевым энергетическим разрешением и постоянной времени 25 пс | Type | Conference Article | ||
Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
Volume | 1 | Issue | Pages | 91-92 | |
Keywords | NbN HEB | ||||
Abstract | Представлены результаты измерения энергетического разрешения терагерцевого сверхпроводникового NbN-детектора на эффектеэлектронного разогрева, работающего при температуре около 10 К. Использование инновационной in situ технологии производства привело к существенному улучшению чувствительности детектора. Увеличение быстродействия детектора было достигнуто за счет реализации дополнительного диффузионного канала охла-ждения электронной подсистемы. Измеренное значение эквивалентной мощности шума на частоте 2.5 ТГц составило 2.0×10-13Вт•Гц-0.5, постоянной времени 25 пс. Соответствующее расчетное значение энергетического разрешения составило 2.5 аДж. | ||||
Address | Нижний Новгород, Россия | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Approved | no | |||
Call Number | Serial | 1833 | |||
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Author | Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. | ||||
Title | Ultimate quantum efficiency of a superconducting hot-electron photodetector | Type | Journal Article | ||
Year | 1998 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 73 | Issue | 26 | Pages | 3938-3940 |
Keywords | NbN SSPD, SNSPD | ||||
Abstract | The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W, respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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0003-6951 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1579 | |||
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Author | Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. | ||||
Title | Picosecond hot-electron energy relaxation in NbN superconducting photodetectors | Type | Journal Article | ||
Year | 2000 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 76 | Issue | 19 | Pages | 2752-2754 |
Keywords | NbN HEB detectors, two-temperature model, IF bandwidth | ||||
Abstract | We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. | ||||
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0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 856 | |||
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Author | Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. | ||||
Title | Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate | Type | Journal Article | ||
Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 91 | Issue | 6 | Pages | 062504 (1 to 3) |
Keywords | NbN films, nanofilms | ||||
Abstract | The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM. The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1425 | |||
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Author | Kerman, A. J.; Dauler, E. A.; Keicher, W. E.; Yang, J. K. W.; Berggren, K. K.; Gol’tsman, G.; Voronov, B. | ||||
Title | Kinetic-inductance-limited reset time of superconducting nanowire photon counters | Type | Journal Article | ||
Year | 2006 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 88 | Issue | 11 | Pages | 111116 (1 to 3) |
Keywords | NbN SSPD, SNSPD | ||||
Abstract | We investigate the recovery of superconducting NbN-nanowire photon counters after detection of an optical pulse at a wavelength of 1550nm, and present a model that quantitatively accounts for our observations. The reset time is found to be limited by the large kinetic inductance of these nanowires, which forces a tradeoff between counting rate and either detection efficiency or active area. Devices of usable size and high detection efficiency are found to have reset times orders of magnitude longer than their intrinsic photoresponse time. The authors acknowledge D. Oates and W. Oliver (MIT Lincoln Laboratory), S.W. Nam, A. Miller, and R. Hadfield (NIST) and R. Sobolewski, A. Pearlman, and A. Verevkin (University of Rochester) for helpful discussions and technical assistance. This work made use of MIT’s shared scanning-electron-beam-lithography facility in the Research Laboratory of Electronics. This work is sponsored by the United States Air Force under Air Force Contract No. FA8721-05-C-0002. Opinions, interpretations, recommendations and conclusions are those of the authors and are not necessarily endorsed by the United States Government. |
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0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1453 | |||
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